Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-29T07:21:37.158Z Has data issue: false hasContentIssue false

Comparison of PtSi Films Grown by Solid-State Reaction and by E-Beam Co-Evaporation: Thermal Stability in Air at 1000 °C

Published online by Cambridge University Press:  11 March 2016

Robert T. Fryer*
Affiliation:
Department of Physics & Astronomy and Laboratory for Surface Science & Technology, University of Maine, Orono, ME 04469-5708, U.S.A.
Robert J. Lad
Affiliation:
Department of Physics & Astronomy and Laboratory for Surface Science & Technology, University of Maine, Orono, ME 04469-5708, U.S.A.
Get access

Abstract

Two different methods were used to synthesize 200 nm thick single-phase, orthorhombic-PtSi films: (i) e-beam co-evaporation (EBC) of Pt and Si onto r-sapphire substrates and (ii) solid-state reaction (SSR) of sputtered Pt films on Si (100) wafers. Morphology, electrical conductivity, and crystalline structure were characterized for as-grown films and for films annealed in air at 1000 °C via scanning electron microscopy (SEM), 4-pt conductivity measurements, and in situ X-ray diffraction (XRD). As-grown EBC films exhibit columnar grain morphology and slight (101) crystalline texture, while SSR films exhibit granular morphology with many voids and a strong (002) texture. Above 600 °C, EBC PtSi films rapidly oxidize to form crystalline Pt3Si and amorphous SiO2 phases. Around 1000 °C, the Pt3Si phase melts and c-Pt grains nucleate. After air annealing for 6 h at 1000 °C, room-temperature XRD shows that the oxidized EBC films consist of Pt3Si and Pt phases within a SiO2 matrix and become electrically insulating. SSR films initially form with a (002) o-PtSi orientation and above 900 °C they recrystallize to preferred (101) texture and exhibit an unchanged electrical conductivity and a stable film morphology during 48 h of air annealing at 1000 °C. Separate oxidation mechanisms are proposed for the two film types.

Type
Articles
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Murarka, S.P., Kinsbron, E., Fraser, D.B., Andrews, J.M., J. Appl. Phys. 54, 6943 (1983).Google Scholar
Sinha, A.K., Marcus, R.B., Sheng, T.T., Haszko, S.E., Appl. Phys. 43, 3637 (1972).CrossRefGoogle Scholar
Das, S.R., Sheergar, K., Xu, D.-X., Naem, A., Thin Solid Films 253, 467 (1994).Google Scholar
Xu, L.L., Wang, J., Liu, H.S., Jin, Z.P., Comp. Coupling Phase Diagr. Thermochem. 32, 101 (2008).Google Scholar
Fryer, R.T., Lad, R.J., Electrical conductivity and thermal stability of Pt3Si, Pt2Si, and PtSi films grown by e-beam co-evaporation, under peer-review (Dec. 2015).CrossRefGoogle Scholar
Thompson, C.V., Annu. Rev. Mater. Res. 42, 399 (2012).CrossRefGoogle Scholar
Gambino, J.P, Colgan, E.G., Mater. Chem. Phys. 52, 99 (1998).Google Scholar
Sinha, A.K., Haszko, S.E., Sheng, T.T., J. Electrochem. Soc. 122, 1714 (1975)Google Scholar
Lad, R.J., Stewart, D.M., Fryer, R.T., Sell, J.C., Frankel, D.J., Bernhardt, G.P., Meulenberg, R.W., Mat. Res. Soc. Symp. Proc. 1746 (2015).Google Scholar
Properties of Metal Silicides , edited by Maex, K., van Rossum, M. (INSPEC, The Institution of Electrical Engineers, London, 1981), p. 21.Google Scholar
International Centre for Diffraction Data, Powder Diffraction File, Card No. 03-065-7973.Google Scholar
International Centre for Diffraction Data, Powder Diffraction File, Card No. 04-015-7964.Google Scholar
International Centre for Diffraction Data, Powder Diffraction File, Card No. 00-004-0802.Google Scholar
Jain, A., Hautier, G., Ong, S. P., Moore, C., Fischer, C., Persson, K., Ceder, G., Phys. Rev. B 84 (4), 045115 (2011).CrossRefGoogle Scholar