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Confinement Barrier Induced Enhancement in Thermal Stability of the Optical Response of InAs/InGaAs/GaAs Submonolayer Quantum Dot Heterostuctures

Published online by Cambridge University Press:  15 May 2017

Debabrata Das ,
Hemant Ghadi ,
Sandeep Madhusudan Singh  and
Subhananda Chakrabarti
Debabrata Das
Affiliation:
Centre for Nanoelectronics, Department of Electrical Engineering Indian Institute of Technology, Bombay Mumbai- 400076, India
Hemant Ghadi
Affiliation:
Centre for Nanoelectronics, Department of Electrical Engineering Indian Institute of Technology, Bombay Mumbai- 400076, India
Sandeep Madhusudan Singh
Affiliation:
Centre for Nanoelectronics, Department of Electrical Engineering Indian Institute of Technology, Bombay Mumbai- 400076, India
Subhananda Chakrabarti*
Affiliation:
Centre for Nanoelectronics, Department of Electrical Engineering Indian Institute of Technology, Bombay Mumbai- 400076, India
*
*Corresponding author: E-mail: subho@ee.iitb.ac.in
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Abstract:

In this study the improvement in thermal stability of optical properties of InAs submonolayer quantum dot (SML QD) heterostructures is observed through incorporation of symmetric AlGaAs barrier layers. Low temperature photoluminescence (PL) spectra shows blue shift with less full width at half maxima, ascribe to the assimilation of AlGaAs barrier layers. The sample with confinement enhancing barrier shows the highest ground to ground transition energy with the lowest dot size distribution. Ex situ annealing of as grown samples, followed by PL analysis, confirms the improvement in thermal stability of optical behavior. For the samples with symmetric AlGaAs layer, annealing at higher temperatures under an inert condition can not change the downward transition energy effectively, whereas normal DWELL structures exhibits significant blue shift for the same.

Keywords

III-Vmolecular beam epitaxy (MBE)crystal growth
Type
Articles
Information
MRS Advances , Volume 2 , Issue 43: Electronic Devices and Materials , 2017 , pp. 2349 - 2354
Copyright
Copyright © Materials Research Society 2017 

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