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CVD Growth of Monolayer MoS2 on Sapphire Substrates by using MoO3 Thin Films as a Precursor for Co-Evaporation

Published online by Cambridge University Press:  27 December 2018

Sajeevi S Withanage  and
Saiful I Khondaker
Sajeevi S Withanage*
Affiliation:
Department of Physics, University of Central Florida, Orlando, FL 32816, United States NanoScience Technology Center, University of Central Florida, Orlando, FL 32816, United States
Saiful I Khondaker
Affiliation:
Department of Physics, University of Central Florida, Orlando, FL 32816, United States NanoScience Technology Center, University of Central Florida, Orlando, FL 32816, United States Department of Electrical & Computer Engineering, University of Central Florida, Orlando, FL 32816, United States
*
*(Email: sajeevi@knights.ucf.edu)
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Abstract

Scalable synthesis of two-dimensional molybdenum disulfide (MoS2) via chemical vapor deposition (CVD) is of considerable interests for many applications in electronics and optoelectronics. Here, we investigate the CVD growth of MoS2 single crystals on sapphire substrates by using thermally evaporated molybdenum trioxide (MoO3) thin films as molybdenum (Mo) source instead of conventionally used MoO3 powder for co-evaporation synthesis. The MoO3 thin film source provides uniform Mo vapor pressure in the growth chamber resulting in clean and reproducible MoS2 triangles without any oxide or oxysulfide species. Scanning electron microscopy, Raman spectroscopy, photoluminescence spectroscopy and atomic force microscopy characterization were performed to characterize the growth results. Very high photoluminescence (PL) response was observed at 1.85 eV which is a good implication of high optical quality of these crystals directly grown on sapphire substrate.

Keywords

2D materialschemical vapor deposition (CVD) (deposition)
Type
Articles
Information
MRS Advances , Volume 4 , Issue 10: Electronic, Photonic and Magnetic Materials , 2019 , pp. 587 - 592
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Copyright
Copyright © Materials Research Society 2018 

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