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Published online by Cambridge University Press: 01 February 2016
Cobalt doped ZnO (ZnO:Co) films with a 1 at% doping rate have been successfullygrown on (100) oriented p type Si substrates by radiofrequency magnetronsputtering. Post annealing treatments at 973 K for various short periods havebeen carried out and structural, optical and electrical properties of the filmshave been investigated. Upon rapid annealing, the dopant distribution in thefilm has been found homogeneous. The annealing improves the (002) texture of thefilm and the mean column width increases with the annealing duration from 60 nmup to 95 nm. The lattice parameter of the ZnO:Co films decreases upon annealingand approaches that of bulk ZnO. The photoluminescence (PL) study reveals thatthe Co2+ ions can be excited directly or through a transfermechanism from the matrix. The PL intensity decreases with the annealing timesuggesting a diffusion process of the dopant impeding theCo2+ emission. At last, the electrical conductivity reachesvalues compatible with potential electroluminescent applications of the ZnO:Cofilms.