Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-10T06:28:42.237Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effects of Annealing on Doped P3HT Thin Films for Potential Electronic Applications

Published online by Cambridge University Press:  19 June 2019

Faniya C. Doswell ,
Harold O. Lee III ,
Jonathan J. Montes  and
Sam-Shajing Sun
Faniya C. Doswell
Affiliation:
Center for Materials Research, Norfolk State University, Norfolk, VA23504, USA Department of Chemistry, Norfolk State University, Norfolk, VA23504, USA
Harold O. Lee III*
Affiliation:
Center for Materials Research, Norfolk State University, Norfolk, VA23504, USA
Jonathan J. Montes
Affiliation:
Center for Materials Research, Norfolk State University, Norfolk, VA23504, USA Department of Chemistry, Norfolk State University, Norfolk, VA23504, USA
Sam-Shajing Sun
Affiliation:
Center for Materials Research, Norfolk State University, Norfolk, VA23504, USA PhD Program in Materials Science and Engineering, Norfolk State University, Norfolk, VA23504, USA Department of Chemistry, Norfolk State University, Norfolk, VA23504, USA
*
*(Email: holee3@me.com)
Get access

Abstract

Polymeric conjugated materials are convenient for developing future soft-material-based semiconductors, conductors, electronic and optoelectronic devices due to their inherent features. Similar to their inorganic counterparts, the addition of certain minority molecules, or dopants, to polymeric conjugated materials can significantly alter the electronic and optoelectronic properties of the host conjugated polymers or composites. This allows for tunability of a variety of electronic and optoelectronic applications. One way to improve device performance is through the process of thermal annealing. Annealing allows for a polymer matrix to self-assemble into a lower energy state, which leads to an increase in crystallinity and higher charge mobility. Previous research does not explicitly define how dopants can affect this process. This study involves an evaluation of the effects of annealing with doped P3HT films to demonstrate changes in optoelectronic and electronic properties.

Keywords

annealingdopantoptoelectronicorganicpolymer
Type
Articles
Information
MRS Advances , Volume 4 , Issue 31-32: Electronics and Photonics , 2019 , pp. 1787 - 1792
Copyright
Copyright © Materials Research Society 2019 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Salzmann, I., Heimel, G., Oehzelt, M., Winkler, S., and Koch, N., Acc. Chem. Res. 49, 370 (2016).CrossRefGoogle Scholar
Kumar, S., Kumar, M., Rathi, S., Yadav, A., Upadhyaya, A., Gupta, S.K., and Singh, A., AIP Conf. Proc. 1953, (2018).Google Scholar
Müller, L., Nanova, D., Glaser, T., Beck, S., Pucci, A., Kast, A.K., Schröder, R.R., Mankel, E., Pingel, P., Neher, D., Kowalsky, W., and Lovrincic, R., Chem. Mater. 28, 4432 (2016).CrossRefGoogle Scholar
Enengl, C., Enengl, S., Pluczyk, S., Havlicek, M., Lapkowski, M., Neugebauer, H., and Ehrenfreund, E., ChemPhysChem 17, 3830 (2016).CrossRefGoogle Scholar
Yamamoto, J. and Furukawa, Y., J. Phys. Chem. B 119, 4788 (2015).CrossRefGoogle Scholar
Chew, A.R. and Salleo, A., MRS Commun. 7, 728 (2017).CrossRefGoogle Scholar
Lee, H. O. III and Sun, S.-S., AIMS Mater. Sci. 5, 479 (2018).Google Scholar
Zhuo, Z., Zhang, F., Wang, J., Wang, J., Xu, X., Xu, Z., Wang, Y., and Tang, W., Solid. State. Electron. 63, 83 (2011).Google Scholar
An, L., Duan, Y., Yuan, Y., Zhou, L., and Zhang, J., Vib. Spectrosc. 68, 40 (2013).CrossRefGoogle Scholar
Komarudin, D., Morita, A., Osakada, K., and Yamamoto, T., Polym. J. 30, 860 (1998).CrossRefGoogle Scholar
Lai, K., Ping Lau, S., Kong, J., Zhao, J., Yang, C., and Li, Y., RSC Adv. 6, 45166 (2016)Google Scholar
Li, G., Shrotriya, V., Huang, J., Yao, Y., and Yang, Y., SPIE Newsroom 3 (2006).Google Scholar
Chen, T.A., Wu, X., and Rieke, R.D., J. Am. Chem. Soc. 117, 233 (1995).CrossRefGoogle Scholar
Enengl, C., Enengl, S., Pluczyk, S., Havlicek, M., Lapkowski, M., Neugebauer, H., and Ehrenfreund, E., ChemPhysChem 17, 3830 (2016).CrossRefGoogle Scholar
Baghgar, M. and Barnes, M.D., ACS Nano 9, 7105 (2015).CrossRefGoogle Scholar
Clark, J., Chang, J.F., Spano, F.C., Friend, R.H., and Silva, C., Appl. Phys. Lett. 94, 1 (2009).Google Scholar
Tsoi, W.C., James, D.T., Kim, J.S., Nicholson, P.G., Murphy, C.E., Bradley, D.D.C., Nelson, J., and Kim, J., 9834 (2011).CrossRefGoogle Scholar