Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-28T19:14:20.420Z Has data issue: false hasContentIssue false
  • English
  • Français

Exponential Conductivity Increase in Strained MoS2 via MEMS Actuation

Published online by Cambridge University Press:  19 June 2019

A. Vidana ,
S. Almeida ,
M. Martinez ,
E. Acosta ,
J. Mireles Jr. ,
T. –J. King  and
D. Zubia
A. Vidana*
Affiliation:
Department of Electrical and Computer Engineering, University of Texas at El Paso
S. Almeida
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
M. Martinez
Affiliation:
Department of Electrical and Computer Engineering, University of Texas at El Paso
E. Acosta
Affiliation:
Department of Electrical and Computer Engineering, University of Texas at El Paso
J. Mireles Jr.
Affiliation:
Electrical and Computer Engineering Department, Universidad Autonoma de Ciudad Juarez, Chihuahua, Mexico
T. –J. King
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
D. Zubia
Affiliation:
Department of Electrical and Computer Engineering, University of Texas at El Paso
*
*(Email: aldovidana@gmail.com)
Get access

Abstract

In this work, a poly-Si0.35Ge0.65 microelectromechanical systems (MEMS)- based actuator was designed and fabricated using a CMOS compatible standard process to specifically strain a bi-layered (2L) MoS2 flake and measure its electrical properties. Experimental results of the MEMS-TMDC device show an increase of conductivity up to three orders of magnitude by means of vertical actuation using the substrate as the body terminal. A force balance model of the MEMS-TMDC was used to determine the amount of strain induced in the MoS2 flake. Strains as high as 3.3% is reported using the model fitted to the experimental data.

Keywords

2D materials
Type
Articles
Information
MRS Advances , Volume 4 , Issue 38-39: Quantum and Nanomaterials , 2019 , pp. 2135 - 2142
Copyright
Copyright © Materials Research Society 2019 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Chhowalla, M., Liu, Z. F. and Zhang, H., Chem. Soc. Rev, 44, 2584-2586,(2015).CrossRefGoogle Scholar
Bertolazzi, S., Brivio, J. and Kis, A., ACS nano, 5, (12), 9703-9709, (2011).CrossRefGoogle Scholar
Almeida, S. F., Zubia, D., Vidaña, A. I. and Martinez, M., Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S), Fifth Edition, (2017).Google Scholar
Guo, H., Lu, N., Wu, X. and Zeng, X. C., The Journal of Physical Chemistry, 118(13), 7242–7249, (2014).Google Scholar
He, K., Poole, C., Mak, K. F. and Shan, J., Nano letters, 13 (6), 2931-2936, (2013).CrossRefGoogle Scholar
Johari, P. and Shenoy, V. B., ACS NANO, 6 (6), 5449–5456, (2012).CrossRefGoogle Scholar
Manzeli, S., Allain, A., Ghadimi, A. and Kis, A., Nano letters, 15 (8), 5330-5335, (2015).CrossRefGoogle Scholar
Tsai, M.-Y., Tarasov, A., Hesabit, Z. R., Taghinejad, H., Campbell, P. M., Joinert, C. A., Adibi, A. and Vogel, E. M., ACS Applied Materials & Interfaces, 7 (23), 12850-12855, (2015).CrossRefGoogle Scholar
Lee, J., Wang, Z., He, K., Shan, J. and Feng, P. X.-L., ACS Nano, 7 (7), 6086-6091, (2013).CrossRefGoogle Scholar
Vidana, A., Zubia, D., Martinez, M., Acosta, E., Mireles, J. J., King, T.-J. and Almeida, S., IOP Semiconductor Science and Technology, 34 (4), 1-8, (2019).Google Scholar
Yu, S., Xiong, H. D., Eshun, K., Yuan, H. and Li, Q., Applied Surface Science, 325, 27-32, (2015).CrossRefGoogle Scholar