Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-13T06:57:28.708Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of the Influence of Deep-Level Defects on the Conversion Efficiency of Si-based Solar Cells

Published online by Cambridge University Press:  19 January 2016

Vladimir G. Litvinov ,
Nikolay V. Vishnyakov ,
Valery V. Gudzev ,
Nikolay B. Rybin ,
Dmitry S. Kusakin ,
Alexander V. Ermachikhin ,
Sergey M. Karabanov ,
Sergey P. Vikhrov ,
Andrey S. Karabanov  and
Evgeny V. Slivkin
Vladimir G. Litvinov*
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Nikolay V. Vishnyakov
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Valery V. Gudzev
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Nikolay B. Rybin
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Dmitry S. Kusakin
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Alexander V. Ermachikhin
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Sergey M. Karabanov
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Sergey P. Vikhrov
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Andrey S. Karabanov
Affiliation:
Helios-Resource Ltd., Saransk, Mordovia, 1 Proletarskaya Str., 430001, Russian Federation
Evgeny V. Slivkin
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
*
*(Email: vglit@yandex.ru)
Get access

Abstract

The influence of deep level defects (DLs) on the conversion efficiency of multicrystalline Si-based standard solar cells (SCs) is investigated. Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200 μm thickness were used for SCs preparation. Three types of SCs with conversion efficiency 10%, 16.8% and 20.4% were studied using capacitance voltage characteristics method (C-V) and by current deep level transient spectroscopy (I-DLTS). The correlation between the total concentration of DLs and the values of the SCs conversion efficiency is found.

Keywords

deep level transient spectroscopy (DLTS)defectsphotovoltaic
Type
Articles
Information
MRS Advances , Volume 1 , Issue 14: Energy and Sustainability , 2016 , pp. 911 - 916
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Wysocki, J.J. and Rappaport, P., J. Appl. Phys. 31, 571 (1960).CrossRefGoogle Scholar
Sze, S.M. and Ng, Kwok K., Physics of semiconductor devices, (John Wiley&Sons, New York, 2006) pp. 663–742.CrossRefGoogle Scholar
Litvinov, V.G., Vishnyakov, N.V., Gudzev, V.V., Mishustin, V.G., Karabanov, S.M., Vikhrov, S.P. and Karabanov, A.S. in Power Electronics and Renewable Energy Conversion (USB Proc. IEEE International Conference on Industrial Technology, 2015) pp. 1071–1074.Google Scholar
Lang, D.V., J. Appl. Phys. 45, 3023 (1974).CrossRefGoogle Scholar
Borsuk, J.A. and Swanson, R.M., IEEE Transactions on electron devices ED-27, 2217 (1980).CrossRefGoogle Scholar
Schmidt, J. and Cuevas, A., J. Appl. Phys. 86, 3175 (1999)CrossRefGoogle Scholar
Mamor, M., Willander, M., Auret, F.D., Meyer, W. and Sveinbjornsson, E., Physical Review B 63, 045201 (2000).CrossRefGoogle Scholar