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Modification of Electronic and Vibrational Properties of Doped Black-P Films

Published online by Cambridge University Press:  13 June 2016

Sayan Sarkar ,
Prashant K Sarswat  and
Michael L. Free
Sayan Sarkar
Affiliation:
Department of Metallurgical Engineering, University of Utah, Salt Lake City, UT84112, USA
Prashant K Sarswat*
Affiliation:
Department of Metallurgical Engineering, University of Utah, Salt Lake City, UT84112, USA
Michael L. Free
Affiliation:
Department of Metallurgical Engineering, University of Utah, Salt Lake City, UT84112, USA
*
*(Email: saraswatp@gmail.com)
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Abstract

Black phosphorus (black-P) research has been the most absent for 100 years since its date of first synthesis in 1914 among all the polymorphs of phosphorus. However, recently it has been re-examined due to its specific puckered single layer geometry. Few or single atomic layer forms of black-P can be isolated using techniques such as micromechanical or liquid exfoliation. However, the exfoliation techniques limit the use of black-P, hence a method of black-P layer deposition onto a substrate is needed. Few or atomic layer deposition of black-P leads to substrate-material interactions and a possible appearance of a band gap opening at the K point. Hence, a series of experiments were conducted in order to grow black-P on different substrates. With the incorporation of doping elements, there was substantial modification in the vibrational and electrical properties. It was observed that sulfur and boron doped films exhibit improved electrical and electronic properties as compared to pristine black-P. Density functional theory predicts significant changes in the band structure and density of states as a consequence of doping. The effects of doping was also reflected in Raman A1g mode. The shift in peak position was also found to be consistent with molar mass of dopants.

Keywords

crystal growthdopantP
Type
Articles
Information
MRS Advances , Volume 1 , Issue 32: Nanotechnology , 2016 , pp. 2285 - 2290
Copyright
Copyright © Materials Research Society 2016 

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References

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