Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-28T02:42:27.612Z Has data issue: false hasContentIssue false
  • English
  • Français

MoOx Hole Collection Layer for a-Si:H Based Photovoltaic Cells

Published online by Cambridge University Press:  24 February 2016

Erenn Ore ,
Jimmy Melskens ,
Arno Smets ,
Miro Zeman  and
Gehan Amaratunga
Erenn Ore*
Affiliation:
Department Of Engineering, University Of Cambridge, Cambridge CB3 0FA, United Kingdom. Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, 2628 CD Delft, The Netherlands.
Jimmy Melskens
Affiliation:
Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, 2628 CD Delft, The Netherlands.
Arno Smets
Affiliation:
Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, 2628 CD Delft, The Netherlands.
Miro Zeman
Affiliation:
Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, 2628 CD Delft, The Netherlands.
Gehan Amaratunga
Affiliation:
Department Of Engineering, University Of Cambridge, Cambridge CB3 0FA, United Kingdom.
*
*(Email: renn1313@yahoo.com)
Get access

Abstract

An experimental investigation to verify the suitability of MoOx as the hole collection layer for a-Si:H based thin film photovoltaic cell is carried out. The photovoltaic cell investigated has the structure of MoOx (hole collection layer) / intrinsic a-Si:H (photoactive layer) / phosphorus doped a-Si:H (electron collection layer) / Ag (back reflector electrode); all deposited in that order onto an Asahi glass (type U) substrate, which is also acting as the transparent front electrode for the cell. The effects of different post deposition annealing temperatures are investigated. The highest efficiency values are obtained for the cells annealed at 120°C. For the photovoltaic cell with 100 nm thick photoactive layer, the highest efficiency is measured to be 6.46 % with an open current voltage (Voc) of 827 mV and a short current density of (Jsc) of 10.44 mA/cm2. For the photovoltaic cell with 300 nm thick photoactive layer, the highest efficiency is measured to be 7.93 % with Voc of 818 mV and Jsc of 13.24 mA/cm2. The efficiency measurements are carried out under AM1.5 test conditions. Jsc values are corrected according to the external quantum efficiency measurements of the cells in the AM1.5 photovoltaic spectrum region between 270 nm and 800 nm. Compared to the reference cell with boron doped μ-SiOx layer acting as the hole collection layer, the cell with MoOx hole collection layer has similar FF, lower Voc, higher Jsc for wavelength up to the green light region of the AM1.5 spectrum and lower Jsc for the longer wavelengths.

Keywords

amorphousSioxide
Type
Articles
Information
MRS Advances , Volume 1 , Issue 14: Energy and Sustainability , 2016 , pp. 977 - 983
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Nonomura, S., Okamoto, H., and Hamakawa, Y., Appl. Phys. A 32, 31 (1983).Google Scholar
Bube, R. H., Photovoltaic Materials, vol. 1 (Imperial College Press, Amsterdam, 1998) p. 34.Google Scholar
Tawada, Y., Okamoto, H., and Hamakawa, Y., Applied Physics Letters 39, 237 (1981).Google Scholar
Belfar, A., Amiri, B., Aitkaci, H., Journal Of Nano- And Electronic Physics, 7 (2), 02007 (2015)Google Scholar
Zeman, M., in Thin Film Solar Cells: Fabrication, Characterization and Applications, vol. 5, edited by Poortmans, J. and Arkhipov, V. (John Wiley & Sons, Chichester, UK, 2006) p. 208.Google Scholar
Street, R. A., Hydrogenated Amorphous Silicon, 1st ed. ( Cambridge University Press, Cambridge, 1991) p. 367.Google Scholar
Okamoto, H., Nitta, Y., Yamaguchi, T. and Hamakawa, Y., Solar Energy Materials 2, 313 (1980).Google Scholar
Greiner, M. T., Chai, L., Helander, M. G., Tang, W. and Lu, Z., Advanced Functional Materials 22 (21), 4557 (2012).Google Scholar
Irfan, I., Ding, H., Gao, Y., Kim, D. Y., Subbiah, J. and So, F., in Organic Materials and Devices for Sustainable Energy Systems, edited by Xue, J., Adachi, C., Holmes, R.J. and Rand, B.P. (MRS Proceedings 1212, Cambridge University Press, 2009) p. 1212.Google Scholar
Meyer, J., Hamwi, S., Kröger, M., Kowalsky, W., Riedl, T. and Kahn, A., Adv. Mater, 24, 5408 (2012).Google Scholar
Kyaw, A. K. K., Sun, X. W., Jiang, C. Y., Lo, G. Q., Zhao, D. W., and Kwong, D. L., Applied Physics Letters 93, 221107 (2008).Google Scholar
Cattin, L., Dahou, F., Lare, Y., Morsli, M., Tricot, R., Houari, S., Mokrani, A., Jondo, K., Khelil, A., Napo, K., and Bernède, J. C., Journal Of Applied Physics 105, 034507 (2009).Google Scholar
Elumalai, N. K., Saha, A., Vijila, C., Jose, R., Jie, Z. and Ramakrishna, S., Phys. Chem. Chem. Phys. 15, 6831 (2013)Google Scholar
Battaglia, C., Yin, X., Zheng, M., Sharp, I. D., Chen, T., McDonnell, S., Azcatl, A., Carraro, C., Ma, B., Maboudian, R. and Wallace, R. M., Nano Letters 14 (2), 967 (2014).Google Scholar
Battaglia, C., Martin De Nicolas, S., De Wolf, S., Yin, X., Zheng, M., Ballif, C., and Javey, A., Applied Physics Letters 104 (11), 113902 (2014).Google Scholar
Park, S. I., Baik, S. J., Im, J. S., Fang, L., Jeon, J. W., and Lim, K. S., Applied Physics Letters, 99 (6), 063504 (2011).Google Scholar