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Operations, Charge Transport, and Random Telegraph Noise inHfOx Resistive Random Access Memory: a Multi-scale ModelingStudy

Published online by Cambridge University Press:  12 January 2016

Francesco M. Puglisi ,
Luca Larcher ,
Andrea Padovani  and
Paolo Pavan
Francesco M. Puglisi*
Affiliation:
DIEF – Università di Modena e Reggio Emilia, Via P. Vivarelli 10/1, 41125 Modena, Italy
Luca Larcher
Affiliation:
DISMI – Università di Modena e Reggio Emilia, Via Amendola 2, 42122 Reggio Emilia, Italy MDLab s.r.l., Località Grand Chemin 30, 11020 Saint-Christophe (AO), Italy
Andrea Padovani
Affiliation:
MDLab s.r.l., Località Grand Chemin 30, 11020 Saint-Christophe (AO), Italy
Paolo Pavan
Affiliation:
DIEF – Università di Modena e Reggio Emilia, Via P. Vivarelli 10/1, 41125 Modena, Italy
*
*(Email: francescomaria.puglisi@unimore.it)
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Abstract

In this work we explore the mechanisms responsible for Random Telegraph Noise(RTN) fluctuations in HfOx Resistive Random Access Memory (RRAM)devices. The statistical properties of the RTN are analyzed in many operatingconditions exploiting the Factorial Hidden Markov Model (FHMM) to decompose themultilevel RTN traces in a superposition of two-level fluctuations. This allowsthe simultaneous characterization of individual defects contributing to the RTN.Results, together with multi-scale physics-based simulations, allows thoroughlyinvestigating the physical mechanisms which could be responsible for the RTNcurrent fluctuations in the two resistive states of these devices, includingalso the charge transport features in a comprehensive framework. We consider twopossible options, which are the Coulomb blockade effect and the possibleexistence of metastable states for the defects assisting charge transport.Results indicate that both options may be responsible for RTN currentfluctuations in HRS, while RTN in LRS is attributed to the temporary screeningeffect of the charge trapped at defect sites around the conductive filament.

Keywords

memorysimulationdefects
Type
Articles
Information
MRS Advances , Volume 1 , Issue 5: Electronics and Photonics , 2016 , pp. 327 - 338
Copyright
Copyright © Materials Research Society 2016 

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References

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