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Optoelectronic properties of graphene quantum dots with molybdenum disulfide

Published online by Cambridge University Press:  28 January 2019

Misook Min ,
Gustavo A. Saenz  and
Anupama B. Kaul
Misook Min
Affiliation:
Department of Materials Science and Engineering, PACCAR Technology Institute, University of North Texas, Denton, TX76207, USA
Gustavo A. Saenz
Affiliation:
Department of Materials Science and Engineering, PACCAR Technology Institute, University of North Texas, Denton, TX76207, USA Department of Electrical Engineering, University of North Texas, Denton, TX76207, USA
Anupama B. Kaul*
Affiliation:
Department of Materials Science and Engineering, PACCAR Technology Institute, University of North Texas, Denton, TX76207, USA Department of Electrical Engineering, University of North Texas, Denton, TX76207, USA
*
*Corresponding Author Email: Anupama.kaul@unt.edu
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Abstract

The presence of a direct optical bandgap in the transition metal dichalcogenide (TMD) layers leads to promising applications in optoelectronic devices such as phototransistors and photodetectors. These devices are commonly fabricated using few-layer and monolayer MoS2 sheets obtained using mechanical exfoliation or chemical vapor deposition techniques. The hybrid structure of quantum dots (QDs) and 2D materials has been investigated to provide outstanding properties for various applications. Herein we report the fabrication of a hybrid QDs/MoS2 photodetector consisting of graphene quantum dots (GQDs) and multilayer MoS2 sheets. The hybrid GQDs and MoS2 films are characterized by atomic force microscopy (AFM); additionally, the I-V characteristics are measured by two-point probe station.

Keywords

2D materialsgraphenequantum dotnanostructurelaser
Type
Articles
Information
MRS Advances , Volume 4 , Issue 10: Electronic, Photonic and Magnetic Materials , 2019 , pp. 615 - 620
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Copyright
Copyright © Materials Research Society 2019 

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