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Reactive sputtering of III-N materials for applications in electronicdevices

Published online by Cambridge University Press:  19 January 2016

Sameer Joglekar ,
Mohamed Azize  and
Tomás Palacios
Sameer Joglekar*
Affiliation:
Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A. Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
Mohamed Azize
Affiliation:
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
Tomás Palacios
Affiliation:
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
*
*(Email: sameer_j@mit.edu)
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Abstract

Gallium Nitride (GaN) and other III-N semiconductors are rapidly gainingimportance in high power and high frequency electronic applications. III-Nmaterial based devices are fabricated on heterostructures that are usually grownby high vacuum techniques such as metal-organic chemical vapor deposition(MOCVD) or molecular beam epitaxy (MBE). However, in many applications, it isnecessary to regrow thin cap layers of III-N materials during devicefabrication. One such application is regrowth of ohmic contacts to III-Ndevices. Heavily doped n+ GaN, or InGaN grown by MBE orMOCVD is used to obtain low resistance non-alloyed ohmic contacts to GaN baseddevices. However, from a commercial point of view, this becomes difficultbecause of the high cost and lack of availability of ultra high vacuum(∼1x10-10 Torr) techniques in most clean roomfacilities. Reactive sputtering provides a cheaper and more ubiquitousalternative for the growth of thin cap layers on parent MOCVD III-Nheterostructures during device fabrication. In this work, we explore thepossibility of using reactive sputtering as a method to grow III-N materials asohmic contacts to GaN based devices.

Keywords

sputteringsemiconductingx-ray diffraction (XRD)
Type
Articles
Information
MRS Advances , Volume 1 , Issue 2: Energy and Sustainability , 2016 , pp. 141 - 146
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

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