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Recombination Dynamics of InGaN/GaN Multiple Quantum Wells WithDifferent Well Thickness

Published online by Cambridge University Press:  17 February 2016

X. C. Wei ,
L. Zhang ,
N. Zhang ,
J. X. Wang  and
J. M. Li
X. C. Wei*
Affiliation:
Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, People's Republic of China
L. Zhang
Affiliation:
Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, People's Republic of China
N. Zhang
Affiliation:
Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, People's Republic of China
J. X. Wang
Affiliation:
Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, People's Republic of China
J. M. Li
Affiliation:
Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, People's Republic of China
*
*(Email: xcwei@semi.ac.cn)
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Abstract

Recombination dynamics of InGaN/GaN multiple quantum wells (MQWs) with differentwell thickness have been studied. From the behaviour of temperature dependentphotoluminescence, we find that the activation energy decreases with the wellthickness increasing. In addition, with temperature changing from 10K to roomtemperature, the “W” shape of full width of half maximumis also thickness related, and it becomes more obvious with the well thicknessincreasing. These results indicate that the dominant recombination dynamicschange from exciton localization to quantum confined stark effect with wellthickness increasing. From our measurement, the InGaN/GaN MQWs with 3nmthickness seems a turning point, which shows the best optimized optical andstructural properties.

Keywords

defectsenergy generationIII-V
Type
Articles
Information
MRS Advances , Volume 1 , Issue 2: Energy and Sustainability , 2016 , pp. 197 - 202
Copyright
Copyright © Materials Research Society 2016 

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References

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