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The Role of Photo-Striction in Tailoring the Nano-Scale Phase Changes in Amorphous Selenium Thin Films

Published online by Cambridge University Press:  20 June 2016

S. Gayathri*
Affiliation:
Dept. of Instrumentation & Applied Physics, Indian Institute of Science, Bangalore, KA 560012, India
G. Sreevidya Varma
Affiliation:
Dept. of Instrumentation & Applied Physics, Indian Institute of Science, Bangalore, KA 560012, India
S. Asokan
Affiliation:
Dept. of Instrumentation & Applied Physics, Indian Institute of Science, Bangalore, KA 560012, India Applied Photonics Initiative, Indian Institute of Science, Bangalore, KA 560012, India
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Abstract

The photo-structural changes in a 2 μm thick amorphous selenium (a-Se) thin film, thermally evaporated on Si substrate, have been studied by micro-Raman spectrometer with 532 nm laser at different laser power densities (1 to 64 W/mm2) and exposure times (15 – 60 s). In addition, the nanoscale photo-structural changes/photo-thermodynamic phase changes are examined on 90 nm a-Se film coated on SiO2 cladding of the optical Fiber Bragg Grating (FBG) sensor on prolonged exposure to a low power (1 mW/mm2, 10 mW/mm2) 532 nm laser, which is measured by means of photo-striction (light induced strain) in the material.

Type
Articles
Copyright
Copyright © Materials Research Society 2016 

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References

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