Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-29T07:40:42.579Z Has data issue: false hasContentIssue false
  • English
  • Français

Secondary Electron Transmission Studies of the Electron Diffusion and Thermalization Processes in Thin CVD Diamond Films

Published online by Cambridge University Press:  26 January 2016

Joan E. Yater ,
Kevin L. Jensen ,
Tatyana I. Feygelson  and
Bradford B. Pate
Joan E. Yater*
Affiliation:
Naval Research Laboratory, Washington, DC 20375, U.S.A.
Kevin L. Jensen
Affiliation:
Naval Research Laboratory, Washington, DC 20375, U.S.A.
Tatyana I. Feygelson
Affiliation:
Naval Research Laboratory, Washington, DC 20375, U.S.A.
Bradford B. Pate
Affiliation:
Naval Research Laboratory, Washington, DC 20375, U.S.A.
*
*(Email: joan.yater@nrl.navy.mil)
Get access

Abstract

Secondary electron transmission measurements are used to examine the electron diffusion and thermalization processes in B-doped nanocrystalline diamond membranes of thickness 2.3 μm and 650 nm. Specifically, transmitted energy spectra are measured following impact by an electron beam that penetrates deeper in the membrane as the beam energy Eo increases. A fully-thermalized emission peak is observed for Eo ≤ 16 keV and Eo ≤ 7 keV from the 2.3-μm-thick and 650-nm-thick films, respectively, with a small high-energy tail beginning to emerge at higher Eo. These measurements are analyzed using Monte Carlo simulations that generate constant-energy contour lines (down to 0.05 Eo) as a function of beam depth into the film. From these simulations, we deduce that secondary electrons have a minimum thermalization length of ∼ 630 nm and ∼ 260 nm in the 2.3-μm-thick and 650-nm-thick films, respectively. Further insight into the secondary-electron transport behavior is gained from the analysis, and this understanding is applied to the design of a transmission electron-current amplifier device.

Keywords

diamonddiffusionelectronic material
Type
Articles
Information
MRS Advances , Volume 1 , Issue 16: Electronics and Photonics , 2016 , pp. 1081 - 1086
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Klein, C. A., J. Appl. Phys. 39, 2029 (1968).CrossRefGoogle Scholar
Jensen, K. L., Yater, J. E., Shaw, J. L., Myers, R. E., Pate, B. B., Butler, J. E., and Feygelson, T., J. Appl. Phys. 108, 044509 (2010).Google Scholar
Yater, J. E. and Shih, A., J. Appl. Phys. 87, 8103 (2000).CrossRefGoogle Scholar
Yater, J. E., Shaw, J. L., Jensen, K. L., Feygelson, T., Myers, R. E., Pate, B. B., and Butler, J. E., Diamond Relat. Mater. 20, 798 (2011).CrossRefGoogle Scholar
Drouin, D., Couture, A. R., Joly, D., Tastet, X., Aimez, V., and Gauvin, R., Scanning 29, 92 (2007).Google Scholar