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The SiC Single Crystal Growth from Nanomaterial Precursor

Published online by Cambridge University Press:  03 June 2019

Yoshimitsu Yamada Open the ORCID record for Yoshimitsu Yamada [Opens in a new window]
Yoshimitsu Yamada*
Affiliation:
CPD Technology Institute, 21-4-3 Nigawatakamaru Takaraduka City, 665-0063, Japan
*
*(Email: yamadasan@leto.eonet.ne.jp)

Abstract

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Unlike the conventional layer by layer growth ,three dimensional growth experiments of SiC single crystal by the Chemical Particle Deposition (CPD)method were carried out both on the polar and nonpolar plane of the SiC seed crystal. The comparison of the morphology of the grown crystals on both samples indicated that the electric field formed by the seed crystal strongly effected the diffusion of the supplied Si and C atoms and their compounds to grow the epitaxial crystal. In spite of the low ionicity of Si-C bonds, this remarkable effect of the electric field on the three dimensional crystal growth mechanism in the CPD method strongly suggested its contribution to the ordering of the stacked layers with its long working range, beyond the deformed boundary layers between the seed surface and the grown crystal.

Keywords

crystal growthdiffusionepitaxynanoscaleparticulate
Type
Articles
Information
MRS Advances , Volume 4 , Issue 50: Broader Impact/Characterization, Processing and Theory , 2019 , pp. 2709 - 2715
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted re-use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright
Copyright © Materials Research Society 2019

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