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Single-step organic vapor phase sulfurization synthesis of p-SnS photo-absorber for graded band-gap thin film heterojunction solar cells with n-ZnO1-x Sx

Published online by Cambridge University Press:  10 May 2016

Faruk Ballipinar  and
Alok C. Rastogi
Faruk Ballipinar*
Affiliation:
Electrical and Computer Engineering, Binghamton University, SUNY, Binghamton, New York 13902 USA Center for Autonomous Solar Power (CASP), Binghamton University, SUNY, Binghamton, New York 13902 USA
Alok C. Rastogi
Affiliation:
Electrical and Computer Engineering, Binghamton University, SUNY, Binghamton, New York 13902 USA Center for Autonomous Solar Power (CASP), Binghamton University, SUNY, Binghamton, New York 13902 USA
*
*(Email: fballip1@binghamton.edu)
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Abstract

Tin sulfide has emerged as a promising solar absorber among the IV-VI binary compound which is earth-abundant and non-toxic. This research provides a new perspective on synthesis of photosensitive monophasic SnS films by organic chemical vapor sulfurization of Sn thin film. S-radicals formed by closed space pyrolysis of di-tert-butyl disulfide (TBDS) diffusively react with Sn to produce SnS film. SnS being an amphoteric semiconductor converts to n-type by trivalent Sb and Bi dopants. The organic vapor sulfurization method described in this research facilitates single-step synthesis of buried junction structures and thus SnS solar cells in a p-n homojunction or p-i-n structures. In this work, vacuum evaporated Sn thin film with a thickness of 100 nm, was converted to SnS by sulfurization under 100 sccm flow of TBDS vapor preheated to 100°C and structural phase evolution and film growth kinetics were investigated for sulfurization at 200°C, 300°C and 400°C for a periods 90 min. X-ray diffraction studies establish single phase highly crystalline film in orthorhombic crystal structure forms at 200°C. Raman scattering results confirm SnS formation with the identification of 2Ag, 2B2g optical phonons modes. Optical bandgap studies confirm a low energy 1.1-1.4 eV indirect bandgap and a strong absorption threshold between 1.4 to 1.6 eV direct band gap depending on the sulfurization conditions correlating with intrinsic defects and phase structure of the film.

Keywords

thin filmsemiconductingchemical vapor deposition (CVD) (chemical reaction)
Type
Articles
Information
MRS Advances , Volume 1 , Issue 41: Energy and Environment , 2016 , pp. 2801 - 2806
Copyright
Copyright © Materials Research Society 2016 

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References

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