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Temperature-dependent Optical Properties of AlN Thin Films by Spectroscopy Ellipsometry

Published online by Cambridge University Press:  13 February 2017

Yao Liu ,
Ehsan Ghafari ,
Xiaodong Jiang ,
Yining Feng ,
Zhe Chuan Feng ,
Ian Ferguson  and
Na Lu
Yao Liu
Affiliation:
Laboratory of optoelectronic materials & detection technology, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning, 530004, China Lyles School of Civil Engineering, School of Materials Engineering, Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47906, U.S.A.
Ehsan Ghafari
Affiliation:
Lyles School of Civil Engineering, School of Materials Engineering, Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47906, U.S.A.
Xiaodong Jiang
Affiliation:
Lyles School of Civil Engineering, School of Materials Engineering, Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47906, U.S.A.
Yining Feng
Affiliation:
Lyles School of Civil Engineering, School of Materials Engineering, Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47906, U.S.A.
Zhe Chuan Feng
Affiliation:
Laboratory of optoelectronic materials & detection technology, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning, 530004, China
Ian Ferguson
Affiliation:
Dept. Elect. Comp. Engineering, Missouri Science and Technology, Rolla, MO 65409, U.S.A.
Na Lu*
Affiliation:
Lyles School of Civil Engineering, School of Materials Engineering, Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47906, U.S.A.
*
*(Email: luna@purdue.edu)
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Abstract

In this work, temperature-dependent optical properties of a series of AlN thin films with different thickness are studied by spectroscopic ellipsometry (SE) ranging from 300 to 825K. The fitted refractive index at 300K is in good agreement with the reported by others, which confirms the high accuracy of the optical model used in this work. The degradation of the absorption properties and the decrease of the bandgap become more pronounced with temperature increases above 475K. A larger change of bandgap at elevated temperature is observed for the thinner AlN epi-layer (300nm) than the thicker ones (404nm). This can be attributed to the poor surface morphologies and crystal qualities in the thinner AlN epi-layer.

Keywords

III-Voptical propertiesthin film
Type
Articles
Information
MRS Advances , Volume 2 , Issue 5: Electronics, Magnetics and Photonics , 2017 , pp. 323 - 328
Copyright
Copyright © Materials Research Society 2017 

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