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Thin n/p GaAs Junctions for Novel High-Efficiency Phototransducers Based on a Vertical Epitaxial Heterostructure Architecture

Published online by Cambridge University Press:  11 January 2016

M.C.A. York ,
F. Proulx ,
D. P. Masson ,
A. Jaouad ,
B. Bouzazi ,
R. Arès ,
V. Aimez  and
S. Fafard
M.C.A. York
Affiliation:
Laboratoire Nanotechnologies Nanosystèmes (LN2) – CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, J1K OA5, QC, Canada
F. Proulx
Affiliation:
Laboratoire Nanotechnologies Nanosystèmes (LN2) – CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, J1K OA5, QC, Canada Azastra Opto Inc., Suite 100, 6090 Longleaf Drive, Ottawa, Ontario, Canada K1W 1G3.
D. P. Masson
Affiliation:
Azastra Opto Inc., Suite 100, 6090 Longleaf Drive, Ottawa, Ontario, Canada K1W 1G3.
A. Jaouad
Affiliation:
Laboratoire Nanotechnologies Nanosystèmes (LN2) – CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, J1K OA5, QC, Canada
B. Bouzazi
Affiliation:
Laboratoire Nanotechnologies Nanosystèmes (LN2) – CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, J1K OA5, QC, Canada
R. Arès
Affiliation:
Laboratoire Nanotechnologies Nanosystèmes (LN2) – CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, J1K OA5, QC, Canada
V. Aimez
Affiliation:
Laboratoire Nanotechnologies Nanosystèmes (LN2) – CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, J1K OA5, QC, Canada
S. Fafard*
Affiliation:
Laboratoire Nanotechnologies Nanosystèmes (LN2) – CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, J1K OA5, QC, Canada Azastra Opto Inc., Suite 100, 6090 Longleaf Drive, Ottawa, Ontario, Canada K1W 1G3.
*
a)Electronic mail: simon.fafard@usherbrooke.ca or simon.fafard@azastra.com
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Abstract

Thin GaAs photovoltaic heterostructures are grown by MOCVD with various p-GaAs base thicknesses. The total n/p absorbing thickness is varied systematically. Output voltages up to ∼1.155V were obtained for individual n/p junctions at an average illumination intensity of ∼8W/cm2. Novel phototransducer devices are then achieved with a vertical epitaxial heterostructure architecture, monolithically integrating 5 or more such thin n/p junctions. Around the design wavelength, the stacked heterostructure design is yielding an optimal external quantum efficiency approaching unity divided by the number of junctions. The modeled and measured conversion efficiencies are exceeding 60%. The photocarrier extraction properties are simulated for different junction thicknesses using a model based on a 3-dimensional (3D) radially-symmetric TCAD implementation of the heterostructures. The study clearly demonstrates that for such thin n/p junctions the photocarrier extraction can still be efficient due to the operation at reduced current densities and higher voltages in heterostructures enhancing electrical power extraction. With the supplementary add-on of a window layer with a reduced sheet resistance for the stacked structure, we demonstrate the possible efficient operation of phototransducers for optical inputs exceeding 150 W/cm2, even for the case of devices designed without gridlines.

Keywords

optoelectronicphotovoltaicepitaxy
Type
Articles
Information
MRS Advances , Volume 1 , Issue 14: Energy and Sustainability , 2016 , pp. 881 - 890
Copyright
Copyright © Materials Research Society 2016 

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References

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