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Epitaxial challenges of GaN on silicon

Published online by Cambridge University Press:  08 May 2015

F. Semond
F. Semond*
Affiliation:
Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, France; fs@crhea.cnrs.fr
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Abstract

Recent successes with the fabrication of high-performance GaN-based heterostructures on silicon substrates have made this technology very promising. However, epitaxial growth of GaN on Si is challenging. This article presents some of the challenges of epitaxial growth of GaN-on-Si substrates focusing on basic aspects that are pertinent to consider for power electronics.

Keywords

nitrideepitaxynucleation & growthelectronic materialsemiconducting
Type
Research Article
Information
MRS Bulletin , Volume 40 , Issue 5: Power Electronics with Wide Bandgap Materials , May 2015 , pp. 412 - 417
Copyright
Copyright © Materials Research Society 2015 

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