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In situ electron microscopy of ferroelectric domains

Published online by Cambridge University Press:  13 January 2015

Linze Li ,
Jacob R. Jokisaari  and
Xiaoqing Pan
Linze Li
Affiliation:
Department of Materials Science and Engineering, University of Michigan, USA; linze@umich.edu
Jacob R. Jokisaari
Affiliation:
Department of Materials Science and Engineering, University of Michigan, USA; joki@umich.edu
Xiaoqing Pan
Affiliation:
Department of Materials Science and Engineering, University of Michigan, USA; panx@umich.edu
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Abstract

This article reviews current progress in research in ferroelectric switching phenomena using in situ electron microscopy. We focus on state-of-the-art instrumentation, analytical methods, experimental procedures, and image contrast mechanisms. Particular emphasis is on ferroelectric domain and domain wall structures that determine ferroelectric behaviors. The applicability of in situ microscopy to studying a wide range of switching phenomena, such as domain nucleation, domain wall motion, and domain wall pinning by various types of defects, in ferroelectric thin films is demonstrated. The underlying physics of these dynamic processes is also discussed.

Keywords

transmission electron microscopyferroelectric
Type
Research Article
Information
MRS Bulletin , Volume 40 , Issue 1: Frontiers of in situ electron microscopy , January 2015 , pp. 53 - 61
Copyright
Copyright © Materials Research Society 2015 

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