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Inkjet Printing of Polymer Thin-Film Transistor Circuits

Published online by Cambridge University Press:  31 January 2011

Seamus E. Burns ,
Paul Cain ,
John Mills ,
Jizheng Wang  and
Henning Sirringhaus
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Abstract

We present a process for manufacturing printable thin-film transistors (TFTs) that is based on solution processing and direct inkjet printing of polymer semiconductors, dielectrics, and conductors, as well as inorganic nanoparticle conductors. We show that the high device yield, uniformity, and resolution required for thin-film electronic applications can be achieved by using a substrate that contains a surface energy pattern to control the flow and spreading of inkjet droplets. This technique overcomes many of the limitations of current inkjet printing technology related to its limited droplet placement accuracy. We demonstrate the potential of this printing-based TFT manufacturing process with the fabrication of 50 dpi active-matrix, polymer dispersed liquid-crystal and Gyricon Smartpaper electronic paper displays.

Keywords

displaysinkjet printingpolymer electronicsthin-film transistors (TFTs)
Type
Research Article
Information
MRS Bulletin , Volume 28 , Issue 11: Inkjet Printing of Functional Materials , November 2003 , pp. 829 - 834
Copyright
Copyright © Materials Research Society 2003

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References

1.Huitema, H.E.A., Gelinck, G.H., van der Putten, J.B.P.H., Kuijk, K.E., Hart, C.M., Cantatore, E., Herwig, P.T., van Breemen, A.J.J.M., and de Leeuw, D.M., Nature 414 (2001) p. 599.CrossRefGoogle Scholar
2.Sheraw, C.D., Nichols, J.A., Gundlach, D.J., Huang, J.R., Kuo, C.C., Klauk, H., Jackson, T.N., Kane, M.G., Campi, J., Cuomo, F.P., and Greening, B.K., in Proc. Int. Electron Devices Meeting 2000 (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2000) p. 619.Google Scholar
3.Mach, P., Rodriguez, S.J., Nortrup, R., Wiltzius, P., and Rogers, J.A., Appl. Phys. Lett. 78 (2001) p. 3592.CrossRefGoogle Scholar
4.Rogers, J.A., Bao, Z., Baldwin, K., Dodabalapur, A., Crone, B., Raju, V.R., Kuck, V., Katz, H., Amundson, K., Ewing, J., and Drzaic, P., Proc. Natl. Acad. Sci. U.S.A. 98 (2001) p. 4835.CrossRefGoogle Scholar
5.Burns, S.E., Kuhn, C., Stone, N., Wilson, D., Arias, A.C., Brown, T., Cain, P., Devine, P., Jacobs, K., Murton, N., MacKenzie, J.D., Mills, J., and Sirringhaus, H., in SID Int. Symp. Dig. of Tech. Papers 33 (2002) p. 1193.CrossRefGoogle Scholar
6.Gelinck, G.H., Geuns, T.C.T., and de Leeuw, D.M., Appl. Phys. Lett. 77 (2000) p. 1487.CrossRefGoogle Scholar
7.Sirringhaus, H., Kawase, T., Friend, R.H., Shimoda, T., Inbasekaran, M., Wu, W., and Woo, E.P., Science 290 (2000) p. 2123.CrossRefGoogle Scholar
8.Kane, M.G., Hill, I.G., Campi, J., Hammond, M.S., Greening, B., Sheraw, C.D., Nichols, J.A., Gundlach, D.J., Huang, J.R., Kuo, C.C., Jia, L., Jackson, T.N., West, J.L., and Francl, J., SID Int. Symp. Dig. of Tech. Papers 32 (2001) p. 57.CrossRefGoogle Scholar
9.Ridley, B.A., Nivi, B., and Jacobson, J.M., Science 286 (1999) p. 746.CrossRefGoogle Scholar
10.Gleskova, H. and Wagner, S., IEEE Electron Device Lett. 20 (1999) p. 473.CrossRefGoogle Scholar
11.Carey, P.G., Smith, P.M., Theiss, S.D., and Wickboldt, P., J. Vac. Sci. Technol., A 17 (1999) p. 1946.CrossRefGoogle Scholar
12.Burns, S.E., Kuhn, C., Jacobs, K., MacKenzie, J.D., Ramsdale, C., Arias, A.C., Watts, J., Etchells, M., Chalmers, K., Devine, P., Murton, N., Norval, S., King, J., Mills, J., Sirringhaus, H., and Friend, R.H., in SID Int. Symp. Dig. of Tech. Papers 34 (2003) in press.Google Scholar
13.Sirringhaus, H., Wilson, R.J., Friend, R.H., Inbasekaran, M., Wu, W., Woo, E.P., Grell, M., and Bradley, D.D.C., Appl. Phys. Lett. 77 (2000) p. 406.CrossRefGoogle Scholar
14.Bao, Z., Dodabalapur, A., and Lovinger, A.J., Appl. Phys. Lett. 69 (1996) p. 4108.CrossRefGoogle Scholar
15.Sirringhaus, H., Tessler, N., and Friend, R.H., Science 280 (1998) p. 1741.CrossRefGoogle Scholar
16.Wang, J. and Sirringhaus, H. (unpublished).Google Scholar
17.Pham, T., Sheridon, N., and Sprague, R., in SID Int. Symp. Dig. of Tech. Papers 33 (2002) p. 119.CrossRefGoogle Scholar