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Links of science & Technology

Published online by Cambridge University Press:  29 November 2013

Harry J. Leamy  and
Jack H. Wernick
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Extract

We humans have employed and improved materials for millennia, but it required the Industrial Revolution of the last century to birth the systematic, science-based development of materials. During this time, effort expended in understanding the process-microstructure-properties relationships of materials conferred great economic and military advantage upon the successful. The introduction of machine power in this era created great leverage for improvements in the strength, ductility, corrosion resistance, formability, and similar properties of materials. Response to this opportunity led to the emergence of the materials profession. Stimulated by opportunity, materials scientists and engineers of the day met many of the challenges by first understanding and then controlling the composition and microstructure of materials. In the process, they defined the materials-engineering profession and left their names as a part of its vocabulary: Martens(ite), Bain(ite), Austen(ite), Schmid, Bessemer, Charpy, and Jomminy, to name a few. In fact the understanding and control of microstructure is the hallmark of materials science and engineering. Of course the ancient art of finding, mining, concentrating, and refining materials from the earth's crust does not apply to this definition since we wish to focus on the engineering of materials.

Five decades ago, a new chapter in the evolution of this profession began by the invention of the transistor. This invention and the development of integrated circuitry that followed from it spawned a new era of materials achievement, again stimulated by the enormous economic and performance gains available. In this arena however, the object of the game was to completely eliminate microstructure while doing away with impurities, save for a desired few, to levels previously unimagined. Today a material thus prepared is a blank slate upon which we can write the microstructure of an integrated circuit.

Type
Links of Sciencé & Technology
Information
MRS Bulletin , Volume 22 , Issue 5 , May 1997 , pp. 47 - 55
Copyright
Copyright © Materials Research Society 1997

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References

1. Historical data on steel-mill products is taken from Historical, Demographic, Economic and Social Data: The United States 1790–1970, by Inter-university Consortium for Political and Social Research (Ann Arbor, 1972).Google Scholar
2. Semiconductor sales volume information was compiled from annual volumes of: US Industrial Outlook, a publication of the U.S. Department of Commerce.Google Scholar
3. Table I is taken from the Semiconductor Industry Association National Technology Roadmap for Semiconductors, published by SEMATECH and available via the world wide web at http://www.sematech.org/public/roadmap/doc/toc.html/.Google Scholar
4.Grondahl, L.O. and Geiger, P.H., Trans. AIEE 46 (1927) p. 357.Google Scholar
5.Scaff, J.H. and Ohl, R.S., Bell System Tech. J. 26 (1947) p. 1.CrossRefGoogle Scholar
6.Pfann, W.G. and Scaff, J.H., J. Metals 1; W.G. Pfann and J.H. Scaff Trans. Metall. Soc. AIME 185 (1949) p. 389.Google Scholar
7.Scaff, J.H., Theurer, H.C., and Shumacher, E.E., Trans. Metall. Soc. AIME 185 p. 383.Google Scholar
8.Bardeen, J. and Brattain, W.H., Phys. Rev. 74 (1948) p. 230.CrossRefGoogle Scholar
9.Shockley, W., Bell System Tech. J. 28 (1949) p. 435.CrossRefGoogle Scholar
10.Teal, G.K. and Little, J.B., Phys. Rev. 78 (1950) p. 647.Google Scholar
11.Czochralski, J., Z. Phys. Chem. 92 (1917) p. 219.Google Scholar
12.Shockley, W., Sparks, M., and Teal, G.K., Phys. Rev. 83 (1951) p. 151.CrossRefGoogle Scholar
13. Teal, G.K., U.S. Patent No. 2,727,840 (December 20, 1955).Google Scholar
14.Hall, R.N., Phys. Rev. 88 (1952) p. 139.CrossRefGoogle Scholar
15.Saby, J.E., Proc. IRE 40 (1952) p. 1358.CrossRefGoogle Scholar
16.Pfann, W.G., J. Metals 4 (1952) p. 747.Google Scholar
17.Vogel, F.L., Pfann, W.G., Corey, H.E., and Thomas, E.E., Phys. Rev. 90 (1953) p. 489.CrossRefGoogle Scholar
18.Wernick, J.H., Benson, K.E., and Dorsi, D., J. Metals 9 (1952) p. 996; J.H. Wernick, J.N. Hobstetter, L.C. Lovell, and D. Dorsi, J. Appl. Phys. 29 (1958) p. 1013; J.E. Kunzler and J.H. Wernick, Trans. Metall. Soc. AIME 212 (1950) p. 856.Google Scholar
19.Teal, G.K. and Buehler, E., Phys. Rev. 87 (1952) p. 190.Google Scholar
20.Pearson, G.L. and Sawyer, B.L., Proc. IRE 40 (1952) p. 1348.CrossRefGoogle Scholar
21.Theurer, H.C., J. Metals 8; Trans. AIME 206 (1956) p. 1316; U.S. Patent No. 3,060,123 (October 23, 1962).Google Scholar
22. Scaff, J.H. and Theurer, H. C., U.S. Patent No. 2,567,970 (September 18, 1951).Google Scholar
23.Pearson, G.L. and Fuller, C. S., Proc. IRE 42 (1954) p. 760.Google Scholar
24.Chapin, D.M., Fuller, C. S., and Pearson, G. L., J. Appl. Phys. 25 (1954) p. 676.CrossRefGoogle Scholar
25.Kilby, J.S., IEEE Trans. Electron Devices (1976), p. 648.Google Scholar
26. Hoerni, J.A., “Application of Free-Electron Theory to Three Dimensional Networks,” paper presented at Professional Group on Electron Devices Meeting, Washington, DC, October 1960.Google Scholar
27. Noyce, R.N., U.S. Patent No. 2,981,877 (April 26, 1961).CrossRefGoogle Scholar
28.Gibbs, J.W., Trans. Conn. Acad. 3 (1876) p. 108; J.W. Gibbs, Trans. Conn. Acad. 3. (1878) p. 343.Google Scholar
29.Burton, J.A., Prim, R.C., and Slichter, W.P., J. Chem. Phys. 21 (1953) p. 1987.CrossRefGoogle Scholar
30.Jackson, K.A., in Growth and Perfection of Crystals, edited by Doremus, R.H., Roberts, B.W., and Turnbull, D. (John Wiley & Sons, Inc., New York, 1958) p. 319.Google Scholar
31.Weeks, J.D., Gilmer, G.H., and Leamy, H.J., Phys. Lett. 31 (1973) p. 549.CrossRefGoogle Scholar
32.Millman, S., ed., A History of Engineering & Science in the Bell System: Physical Sciences (1925–1980) (AT&T Bell Laboratories, 1985).CrossRefGoogle Scholar
33.Smits, F.M., ed., A History of Engineering & Science in the Bell System: Electronics Technology (1925–1975) (AT&T Bell Laboratories, 1985).Google Scholar
34.An Age of Innovation: The World of Electronics: 1930–2000 by the Editors of Electronics (McGraw-Hill Publications Company, New York, NY, 1981).Google Scholar