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Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications

Published online by Cambridge University Press:  29 November 2013

Wei William Lee  and
Paul S. Ho
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Continuing improvement of microprocessor performance historically involves a decrease in the device size. This allows greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However higher packing density requires a much larger increase in the number of interconnects. This has led to an increase in the number of wiring levels and a reduction in the wiring pitch (sum of the metal line width and the spacing between the metal lines) to increase the wiring density. The problem with this approach is that—as device dimensions shrink to less than 0.25 μm (transistor gate length)—propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. The smaller line dimensions increase the resistivity (R) of the metal lines, and the narrower interline spacing increases the capacitance (C) between the lines. Thus although the speed of the device will increase as the feature size decreases, the interconnect delay becomes the major fraction of the total delay and limits improvement in device performance.

To address these problems, new materials for use as metal lines and interlayer dielectrics (ILD) as well as alternative architectures have been proposed to replace the current Al(Cu) and SiO2 interconnect technology.

Type
Low-Dielectric-Constant Materials
Information
MRS Bulletin , Volume 22 , Issue 10: Low-Dielectric-Constant Materials , October 1997 , pp. 19 - 27
Copyright
Copyright © Materials Research Society 1997

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References

1. Edelstein, D.C., Sai-Halasz, G.A., and Mii, Y-J., IBM J. Res. Dev. 39 (4) (1995) p. 383.Google Scholar
2. Wilson, S.R. and Tracy, C.J., eds., Handbook of Multilevel Metallization for Integrated Circuits (Noyes Publications, Park Ridge, NJ, 1993).Google Scholar
3. Ryan, J.G., Geffken, R.M., Poulin, N.R., and Paraszczak, J.R., IBM J. Res. Dev. 39 (4) (1995) p. 371.Google Scholar
4. Buhr, M.T., in Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, edited by Havemann, R., Schmitz, J., Komiyama, H., and Tsubouchi, K. (Mater. Res. Soc. Symp. Proc., Pittsburgh, 1996) p. 3.Google Scholar
5. The National Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA, 1994).Google Scholar
6. Bohr, M., Tech. Digest IEEE Int. Electron. Devices Meeting 1995, p. 241.Google Scholar
7. Jeng, S-P., Havemann, R., and Chang, M., in Advanced Metallization for Devices and Circuits—Science, Technology, and Manufacturability, edited by Murarka, S.P., Katz, A., Tu, K.N., and Maex, K. (Mater. Res. Soc. Symp. Proc. 337, Pittsburgh, 1994) p. 25.Google Scholar
8. Jeng, S-P., Chang, M., Kroger, T., McAnally, P., and Havemann, R., VLSI Tech. Symp. Tech. Dig. (1994) p. 73.Google Scholar
9. Nishiyama, Y., Nakata, R., Hayasaka, N., Okano, H., Aoki, R., Nagamatsu, T., Satoh, A., Toyosaki, M., and Ito, H., U.S. Patent No. 5,429,995 (1995).Google Scholar
10. Fleming, J., Roherty-Osmun, E., and Farino, A., in Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, edited by Havemann, R., Schmitz, J., Komiyama, H., and Tsubouchi, K. (Materials Research Society, Pittsburgh, 1997) p. 471.Google Scholar
11. Lee, W.W. et al., in Proc. SEMATECH Low Dielectric Const. Mater. Interconnect Workshop (SEMATECH, Austin, TX, 1996) p. 261.Google Scholar
12. Labelle, C., Limb, S., and Gleason, K., 3rd DUMIC Proc. 1997, p. 98.Google Scholar
13. Timmons, R. and Han, L. (private communication).Google Scholar
14. Ting, C.H. and Seidel, T.E., in Low-Dielectric Constant Materials—Synthesis and Applications in Microelectronics, edited by Lu, T-M., Murarka, S.P., Kuan, T.S., and Ting, C.H. (Mater. Res. Soc. Symp. Proc. 381, Pittsburgh, 1995) p. 3.Google Scholar
15. SEMATECH material presented at SEMATECH Low Dielectric Constant Materials and Interconnects Workshop, San Diego, May 1, 1996.Google Scholar
16. Singer, P., Semicond. Int. (1996) p. 88.Google Scholar
17. Hunter, W., Tech. Digest IEEE Int. Electron. Devices Meeting 1995 5 p. 483.Google Scholar
18. Jin, C., Ting, L, Taylor, K., Seha, T., and Luttmer, J., in Proc. 2nd Int. Dielectric for VLSI/ULSI Multilayer Interconnect Conf. (DUMIC) (Tampa, FL, 1996) p. 21.Google Scholar
19. Griffin, A., Brotzen, F., and Loos, P., J. Appl. Phys. 76 (1994) p. 4007.Google Scholar
20. Hurd, A., MRS Bulletin 21 (7) (1996) p. 11.Google Scholar
21. Weast, R., ed., CRC Handbook of Chemistry and Physics, 67th ed. (CRC Press, Inc., Boca Raton, FL, 1986).Google Scholar
22. Shih, W., Levine, J., and Chang, M., in Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, edited by Havemann, R., Schmitz, J., Komiyama, H., and Tsubouchi, K. (Materials Research Society, Pittsburgh, 1997) p. 479.Google Scholar
23. Jeng, S., Taylor, K., Lee, C., Ting, L., Chang, M., Seha, T., Eissa, M., Nguyen, H., Jin, C., Lane, A., McAnally, P., Havemann, R., and Luttmer, J., Advanced Metallization and Interconnect Systems for ULSI Applications in 1995, edited by Ellwanger, R. and Wang, S. (Materials Research Society, Pittsburgh, 1996) p. 15.Google Scholar
24. Lee, W.W., Jain, M., Taylor, K., Havemann, R., and Luttmer, J., presented at Symposium H, Materials Research Society Meeting, Boston, December 2, 1996.Google Scholar
25. Jain, M., Taylor, K., Dixit, G., Lee, W., Ting, L., Shinn, G., Nag, S., Havemann, R., and Luttmer, J., in Proc. VMIC Conf. (Tampa, FL, 1996) p. 23.Google Scholar
26. For example, see Low-Dielectric Constant Materials — Synthesis and Applications in Microelectronics, edited by Lu, T-M., Murarka, S.P., Kuan, T.S., and Ting, C.H. (Mater. Res. Soc. Symp. Proc. 381, Pittsburgh, 1995); Low-Dielectric Constant Materials II, edited by K. Uram, H. Treichel, A.C. Jones, and A. Lagendijk (Mater. Res. Soc. Symp. Proc. 443, Pittsburgh, 1997); Low-Dielectric Constant Materials III. edited by C. Case, P. Kohl, T. Kikkawa, and W.W. Lee (Mater. Res. Soc. Symp. Proc. 476, Pittsburgh, 1997).Google Scholar
27. For example, see Proceedings from the Low Dielectric Constant Materials and Interconnects Workshop (SEMATECH, Austin, TX, 1996).Google Scholar
28. For example, see Proc. Int. Dielectric for VLSI/ULSI Multilayer Interconnect Conf. (DUMIC) (Tampa, FL, 1995); Proc. 2nd DUMIC (Tampa, FL, 1996); Proc. 3rd DUMIC (Tampa, FL, 1997).Google Scholar