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A 3-D Kinetic Monte Carlo Study of the Growth of Si Thin Films Using Beams With Varying Angle of Incidence

Published online by Cambridge University Press:  15 February 2011

S.W. Levine ,
J.R. Engstrom  and
P. Clancy
S.W. Levine
Affiliation:
School of Chemical Engineering, Olin Hall, Cornell University, Ithaca, NY 14853
J.R. Engstrom
Affiliation:
School of Chemical Engineering, Olin Hall, Cornell University, Ithaca, NY 14853
P. Clancy
Affiliation:
School of Chemical Engineering, Olin Hall, Cornell University, Ithaca, NY 14853
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Abstract

Three-dimensional Kinetic Monte Carlo simulations were used to model the deposition of a hyperthermal molecular beam at varying angles of incidence. The simulations incorporate incident atom-substrate interactions, many layer growth, and attempt to mimic deposition and growth of Si on a Si(100) substrate. At high angles of incidence, the formation of “flake”-like structures are seen. The growth of the flakes follow the same general trends as previous two-dimensional simulations where non-local shadowing produces a porous thin film and the columns grow into the incident beam. Increased substrate temperature increased the widths of the flakes perpendicular to the path of the beam and allowed the grown film to remain defect-free for a time before columnar structure begins.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 440: Symposia CA – Structure and Evolution of Surfaces , 1996 , 413
Copyright
Copyright © Materials Research Society 1997

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