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3D Simulations on Realistic GaN-Based Light-Emitting Diodes

Published online by Cambridge University Press:  01 February 2011

Simon Li ,
Z.Q. Li ,
O. Shmatov ,
C.S. Xia  and
W. Lu
Simon Li
Affiliation:
simon@crosslight.com, Crosslight Software Inc., Canada
Z.Q. Li
Affiliation:
zqli@crosslight.com, Crosslight Software Inc., Canada
O. Shmatov
Affiliation:
oleksiy@crosslight.com, Crosslight Software Inc., Canada
C.S. Xia
Affiliation:
csxia@sitp.ac.cn, Shanghai Institute of Technique Physics, China, People's Republic of
W. Lu
Affiliation:
wlu@sitp.ac.cn, Shanghai Institute of Technique Physics, China, People's Republic of
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Abstract

Comprehensive multiscale models have been employed to simulate the realistic GaN based light-emitting diodes (LED) using 3D finite-element analysis. The advanced features include drift-diffusion model for carrier transport, self-consistent Poisson-Shrodinger and K·P models for multi-quantum well band structure, quantum tunneling model for heterojunction, spontaneous and piezoelectric polarization models for built-in electric field, heat flow model for self-heating and ray-tracing model for photon extraction. All the advanced capabilities have been integrated into our software APSYS[1]. In this paper, we present the 3D simulations on the InGaN/InGaN LEDs. Based on the detailed simulation results, we were able to analyze the impact of micro- and nano-scale physical effects such as current crowding, carrier leakage, built-in interface charge and self-heating on the internal efficiency of the device. The macro-scale effect of the geometry on photon extraction was analyzed using 3D ray-tracing technique. Results of different structures will be given to demonstrate the power of the software in handling complicated realistic LED geometries. The simulation results can be used to optimize the design of quantum well layers, blocking layer materials and electrode geometries etc.

Keywords

simulationdevicessemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF12-12
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

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