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3-dimensional imaging of dislocation microstructures by electron beams
Published online by Cambridge University Press: 27 February 2012
Abstract
We review the progress in the electron tomography of dislocation microstructures in the transmission electron microscope (TEM). Dislocation contrast is visible both in conventional TEM and scanning TEM (STEM) modes and, despite the complicated intensity variations, dislocation contrast can be isolated using computational filtering techniques prior to reconstruction. We find that STEM annular dark-field (STEM-ADF) imaging offers significant advantages in terms of dislocation contrast and background artifacts. We present several examples, both in semiconducting and metallic systems, illustrating the properties of 3D dislocations. We present the high-angle triple-axis (HATA) specimen holder where the diffraction condition can be chosen at will and dislocation tomograms of multiple reflections can be combined. 3D dislocations are analyzed in terms of dislocation density and dislocation nodal structures. Several avenues of study are suggested that may exploit the 3D dislocation data.
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 1421: Symposium PP – Three-Dimensional Tomography of Materials , 2012 , mrsf11-1421-pp02-08
- Copyright
- Copyright © Materials Research Society 2012