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Ablation Lithography for TFT-LCD

Published online by Cambridge University Press:  17 March 2011

Kenkichi Suzuki ,
Nobuaki Hayashi ,
Hiroshi Masuhara  and
Thomas K. Lippert
Kenkichi Suzuki
Affiliation:
Displays, Hitachi, Ltd., 3300 Hayano, Mobara, Japan
Nobuaki Hayashi
Affiliation:
Displays, Hitachi, Ltd., 3300 Hayano, Mobara, Japan
Hiroshi Masuhara
Affiliation:
Applied Physics Department, Osaka University, Suita, Osaka, Japan
Thomas K. Lippert
Affiliation:
Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
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Abstract

Ablation lithography is based on the photo-decomposition ablation of polymer materials by excimer laser. It is a self-development process, and accordingly possible to reduce the throughput time and manufacturing cost of TFT-LCD. The major alterations from the conventional photolithography are the resist material and the mask. Developing both the technologies and using an experimental exposure& aligner, we fabricated a TFT pattern on 300 × 400 mm2 glass substrate. The result proves the feasibility of EAL as an high throughput lithography suitable for a-Si TFT.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D1.2.1
Copyright
Copyright © Materials Research Society 2001

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References

1. Kawamura, Y., Toyoda, K., and Namba, S., Appl. Phys. Lett. 40, 374 (1982)Google Scholar
2. Srinivasan, R., Mayne-Banton, V., Appl. Phys. Lett. 41, 578 (1982)Google Scholar
3. Patel, R. S., Redmond, T. F., Tessler, C., Tudryn, D., and Pulaski, D., Intn'l J. Microcircuit and Electronic Packaging 18, 266 (1995)Google Scholar
4. Davis, G.M., Gibson, A.F., Gower, M.C., Lawes, R.A. and Moody, R.A., in Microcircuit Engineering '83 (Cambridge, 1983)Google Scholar
5. Suzuki, K., Matsuda, M., Ogino, T., Hayashi, N., Terabayashi, T., and Amemiya, K., Proc. SPIE 2992, 98 (1997)Google Scholar
6. Shannon, M. A. and Russo, R. E., Appl. Phys. Lett. 67, 3227 (1995)Google Scholar
7. Lang, L., Absorption spectra in the ultraviolet and visible region, (Publishing House of Hungarian Academy of Science, Budapest, 1964) vol.2 Google Scholar
8. Kueper, S. and Brannon, J., Proc. SPIE 1598, 27 (1991)Google Scholar
9. S. Bennett, M. W., The synthesis and UV-laser ablation of polyurethane, Thesis, University of Hull (1995)Google Scholar
10. Srinivasan, R., Casey, K. G., and Braren, B., Chemtronics 4, 153 (1989)Google Scholar
11. Rainer, F., Lowdermilk, W. H., Milam, D., Carniglia, C. K., Hart, T. T., and Lichtenstein, T. L., Appl. Opt. 24, 496 (1985)Google Scholar
12. Born, M. and Wolf, E., Principle of optics, (Pergamon Press, 4th ed. 1970) pp.51–70 Google Scholar
13. Fukumura, H., Mibuka, N., Eura, S., Masuhara, H., and Nishi, N., J. Phys. Chem. 97, 13761 (1993)Google Scholar
14. Lippert, T., Yabe, A., and Wokaun, A., Adv. Mater. 9, 105 (1997)Google Scholar
15. Lippert, T., Bennett, L. S., Kunz, T., Hahn, C., Wokaun, A., Furutani, H., Fukumura, H., Masuhara, H., Nakamura, T., and Yabe, A., Proc. SPIE 2992, 135 (1997)Google Scholar