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1/f Noise Measurements of Hydrogenated Amorphous Silicon-Carbon Alloys

Published online by Cambridge University Press:  16 February 2011

H. M. Dyalsingh ,
G. M. Khera ,
J. Kakalios ,
C. C. Tsai  and
R. A. Street
H. M. Dyalsingh
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455 USA
G. M. Khera
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455 USA
J. Kakalios
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455 USA
C. C. Tsai
Affiliation:
Xerox-PARC, Palo Alto, CA 94304 USA
R. A. Street
Affiliation:
Xerox-PARC, Palo Alto, CA 94304 USA
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Abstract

Measurements of the optical, electronic and 1/f noise properties for a series of n-type doped hydrogenated amorphous silicon carbide thin films with varying gas phase concentrations of CH4 are described. The increase in the optical absorption edge of the n-type a-SiCx:H films with the addition of carbon is slower than in p-type films. Studies of the variation in the non-Gaussian statistics which characterize the 1/f noise indicate that the disorder at the mobility edge is greater for films with higher carbon concentrations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 631
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Fan, J. and Kakalios, J., Phys. Rev. B 47, 10903 (1993).CrossRefGoogle Scholar
2. Weisfield, R.L. and Tsai, C.C., Conf, M.R.S.. Proc. 192, 423 (1991).Google Scholar
3. Yamada, , Keene, J., Kanagai, M. and Takahashi, K., Appl. Phys. Lett. 46, 272 (1985).Google Scholar
4. Tawada, Y., Tsuge, K., Kondo, M., Okamoto, H. and Hamakawa, Y., J. Appl. Phys. 53, 5273 (1982).CrossRefGoogle Scholar
5. Palsule, C., Gangopadhyay, S., Cronauer, D. and Schröder, B., Phys. Rev. B 48, 10804 (1993).CrossRefGoogle Scholar
6. Teuschler, T., Hundhausen, M. and Ley, L., J. Non-Cryst. Solids 137 & 138, 1107 (1991).CrossRefGoogle Scholar
7. Ihn, T., Savchenko, A. K., Raikh, M. E. and Schwartz, R., J. Non-Cryst. Solids 137 & 138, 523 (1991).Google Scholar
8. Bernhard, N., Frank, B. and Bauer, G. H., J. Non-Cryst. Solids 164–166, 473 (1993).CrossRefGoogle Scholar
9. Fan, J. and Kakalios, J., J. Appl. Phys. 74, 1799 (1993).Google Scholar
10. Khera, G. M. and Kakalios, J., MRS Proc., this volume.Google Scholar
11. Parman, C.E., Israeloff, N. E. and Kakalios, J., Phys. Rev. Lett 69, 1097 (1992); Phys. Rev. B 47, 12578 (1993).CrossRefGoogle Scholar
12. Jackson, W. B. and Amer, N.M., Phys. Rev. B 25, 5559 (1982).Google Scholar