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Annealing Effects on Ta Doped SnO2 Films

Published online by Cambridge University Press:  12 July 2012

Junjun Jia ,
Yu Muto ,
Nobuto Oka  and
Yuzo Shigesato
Junjun Jia
Affiliation:
Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258, Japan
Yu Muto
Affiliation:
Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258, Japan
Nobuto Oka
Affiliation:
Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258, Japan
Yuzo Shigesato
Affiliation:
Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258, Japan
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Abstract

Ta doped SnO2 (TTO) films prepared on quartz glass substrates at 200 °C were annealed in the air to investigate the annealing effect on the structural, the optical, and the electrical properties. It is shown that the annealing for TTO films resulted in beneficial effect on the electrical resistivity by improving the carrier density and Hall mobility. The lowest resistivity was 1.4 × 10-3Ω cm obtained at 400 °C annealing temperature. The scattering mechanism in TTO films was discussed from the optical and electrical perspectives. The variation in Hall mobility with increasing the annealing temperature may be attributed to the scattering from the ionized and neutral impurities in TTO films.

Keywords

annealingTathin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1454: Symposium HH – Nanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems , 2012 , pp. 245 - 251
Copyright
Copyright © Materials Research Society 2012

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References

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