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Annealing Effects to Electrode Pt / Ti for PZT

Published online by Cambridge University Press:  21 February 2011

Ken Numata ,
Katsuhiro Aoki ,
Yukio Fukuda  and
Akitoshi Nishimura
Ken Numata
Affiliation:
Texas Instruments Japan, Miho Plant, ULSI Development, Kihara2350, Miho-mura, Ibaraki-ken, Japan
Katsuhiro Aoki
Affiliation:
Texas Instruments Japan, Miho Plant, ULSI Development, Kihara2350, Miho-mura, Ibaraki-ken, Japan
Yukio Fukuda
Affiliation:
Texas Instruments Japan, Miho Plant, ULSI Development, Kihara2350, Miho-mura, Ibaraki-ken, Japan
Akitoshi Nishimura
Affiliation:
Texas Instruments Japan, Miho Plant, ULSI Development, Kihara2350, Miho-mura, Ibaraki-ken, Japan
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Abstract

The application of ferroelectrics such as SrTiO3 or PbZrxTi(1−x)O3 to the insulator of DRAM cell capacitors has been extensively studied. The bottom electrode Pt / Ti for these ferroelectrics needs to be thermally stable because of the crystallization process of ferroelectrics. By varying the annealing temperature from 400°Cto 800°C, we examined the annealing effects to the electrode Pt / Ti by SEM, TEM and in-situ XRD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 659
Copyright
Copyright © Materials Research Society 1994

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References

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