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Asymmetric Relaxation in Epitaxial Layers of III-V Compounds

Published online by Cambridge University Press:  25 February 2011

A. G. Turnbull ,
G. S. Green ,
B. K. Tanner  and
M. A. G. Halliwell
A. G. Turnbull
Affiliation:
Physics Department, University of Durham, South Road, Durham, DH1 3LE, U.K.
G. S. Green
Affiliation:
Physics Department, University of Durham, South Road, Durham, DH1 3LE, U.K.
B. K. Tanner
Affiliation:
Physics Department, University of Durham, South Road, Durham, DH1 3LE, U.K.
M. A. G. Halliwell
Affiliation:
British Telecom Research Laboratories, Martlesham Heath, Ipswich, UK.
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Abstract

Relaxation in a 3μm epitaxial layer of GaAsSb on GaAs, a 1μm layer of InGaAs on InP and an InGaAs superlattice on InP has been investigated by double crystal X-ray diffractometry and double crystal X-ray synchrotron topography and found to be asymmetric. The origins of assymetric relaxation are discussed and the sensitivity of diffractometry and topography to the detection of layer relaxation compared.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 513
Copyright
Copyright © Materials Research Society 1991

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References

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