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Carrier Confinement Effects in Epitaxial Silicon Quantum Wells Prepared by MOCVD

Published online by Cambridge University Press:  28 February 2011

H. Paul Maruska ,
R. Sudharsanan ,
Eric Bretschneider ,
Albert Davydov ,
J.E. Yu ,
Balu Pathangey ,
K.S. Jones  and
Timothy J. Anderson
H. Paul Maruska
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730
R. Sudharsanan
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730
Eric Bretschneider
Affiliation:
Chemical Engineering Department, University of Florida, Gainesville, FL 32611
Albert Davydov
Affiliation:
Chemical Engineering Department, University of Florida, Gainesville, FL 32611
J.E. Yu
Affiliation:
Chemical Engineering Department, University of Florida, Gainesville, FL 32611
Balu Pathangey
Affiliation:
Chemical Engineering Department, University of Florida, Gainesville, FL 32611
K.S. Jones
Affiliation:
Materials Science Department, University of Florida, Gainesville, FL 32611
Timothy J. Anderson
Affiliation:
Chemical Engineering Department, University of Florida, Gainesville, FL 32611
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Abstract

Silicon multiquantum wells ranging in width from 3 to 15 nm were deposited on closely lattice-matched ZnS barriers. MOCVD was used to deposit the ZnS films using diethyl zinc and hydrogen sulfide as the precursors; disilane was used to deposit silicon layers at low temperatures. Single and multiple silicon nano-layers were observed by transmission electron microscopy and secondary ion mass spectrometry. Photoluminesence studies revealed emissions peaks which were blue-shifted with respect to the edge emission from bulk silicon substrates. The observation of emission from silicon nanostructures shifted to wavelengths as short as the 800-850 nm range is consistent with the effects of quantum confinement in silicon nanostructures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 987
Copyright
Copyright © Materials Research Society 1995

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References

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