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Characterization of Light Emitting Porous Polycrystalline Silicon Films

Published online by Cambridge University Press:  15 February 2011

M. C. Poon ,
P. G. Han ,
J. K. O. Sin ,
H. Wong  and
P. K. Ko
M. C. Poon
Affiliation:
Department of Electrical & Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
P. G. Han
Affiliation:
Department of Electrical & Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
J. K. O. Sin
Affiliation:
Department of Electrical & Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
H. Wong
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong
P. K. Ko
Affiliation:
Department of Electrical & Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
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Abstract

Polycrystalline silicon (poly-Si) thin films (∼700nm) were deposited by LPCVD, doped with 950°C phosphorous diffusion, and rendered porous by anodization and stain etching. From x-ray photoelectron spectroscopy, poly-Si films have atomic concentration of C(ls):0(ls):Si(2p) = 6%:15%:79%. However, porous poly-Si (PPS) films with weak photoluminescence (PL) have C:O:Si of 20%:38%:42%. For PPS films with strong PL, C:O:Si is 11%:38%:51%. From micro-Raman, scattered spectra for 632nm laser source has peak at 735nm and full wave half maximum (FWHM) of 76nm, and is similar to the PL spectra excited by 400nm uv laser source. High resolution transmission electron microscopy (TEM) study shows that PPS film is of complex structure and composes of numerous Si nano-crystals (1∼10nm) surrounded by amorphous materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 415
Copyright
Copyright © Materials Research Society 1997

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References

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