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Chemical Vapor Deposition of Multiphase Boron-Carbon-Silicon Ceramics

Published online by Cambridge University Press:  15 February 2011

E. Michael Golda  and
B. Gallois
E. Michael Golda
Affiliation:
Department of Materials Science and EngineeringStevens Institute of Technology, Hoboken, NJ, 07030.
B. Gallois
Affiliation:
Department of Materials Science and EngineeringStevens Institute of Technology, Hoboken, NJ, 07030.
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Abstract

Specific compositions of boron-carbon-silicon ceramics exhibit improved abrasive wear and good thermal shock resistance, but require bulk sintering at temperatures in excess of 2100K. The formation of such phases by chemical vapor deposition was investigated in the temperature range of 1073K–1573K. Methyltrichlorosilane (CH3SiCl3), boron trichloride, and methane were chosen as reactant gases, with hydrogen as a carrier gas and diluent. The coatings were deposited in a computer-controlled, hot-wall reactor at a pressure of 33 MPa (200 Torr).

Below 1473K the coatings were amorphous. At higher temperatures non-equilibrium reactions controlled the deposition process. The most common coating consisted of a silicon carbide matrix and a silicon boride, SiB6, dispersed phase. Multiphase coatings of B+B4C+SiB6 and SiC+SiB6+SiB14 were also deposited by controlling the partial pressure of methane and boron trichloride. Non-equilibrium thermodynamic analysis qualitatively predicted the experimentally deposited multiphase coatings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 250: Symposium R – Chemical Vapor Deposition of Refractory Metals and Ceramics II , 1991 , 167
Copyright
Copyright © Materials Research Society 1992

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