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Combined Optical, Structural and Theoretical Assessment of MOCVD Grown Multiple GaAs Quantum Wells

Published online by Cambridge University Press:  21 February 2011

Z. C. Feng ,
J. Cen ,
K. K. Bajaj ,
R. L. Messham ,
L. L. Clemen ,
M. Yoganathan  and
W. J. Choyke
Z. C. Feng
Affiliation:
Department of Physics, National University of Singapore, S0511, SINGAPORE
J. Cen
Affiliation:
Department of Physics, Emory University, Atlanta, GA 30322
K. K. Bajaj
Affiliation:
Department of Physics, Emory University, Atlanta, GA 30322
R. L. Messham
Affiliation:
Westinghouse Science and Technology Center, Pittsburgh, PA 15235
L. L. Clemen
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
M. Yoganathan
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
W. J. Choyke
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
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Abstract

A combined characterization of theoretical calculation and experimental measurements, including Raman scattering, photoluminescence and cross sectional transmission electron microscopy, has been made on GaAs-AlxGa1-xAs multiple quantum wells (MQW) structures with different well widths grown by metalorganic chemical vapor epitaxy (MOCVD) with a modified reactor. Various parameters of these MQWs are obtained. The results with and without the alkyl push flow are compared. Related physical phenomena are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 359
Copyright
Copyright © Materials Research Society 1994

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References

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