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Delayed Field Transient Photocurrent Measurements in a-Si:H

Published online by Cambridge University Press:  21 February 2011

Homer Antoniadis  and
E. A. Schiff
Homer Antoniadis
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13&13244–1130
E. A. Schiff
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13&13244–1130
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Abstract

We have measured the transient photocurrent in “time-of-flight” structures of a-Si:H using bias voltages applied following photocarrier generation by a laser flash. The delayed field technique appears promising both as a probe of the deep level distribution and also of photocarrier thermalization. We describe a simplified theory for the delayed field transients including the effects of the delay time and the magnitude of the applied voltage. The theory accounts for the measurements adequately.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 783
Copyright
Copyright © Materials Research Society 1992

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References

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