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Deposition and Electrical Characterization of Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 (70/30) Thin Films

Published online by Cambridge University Press:  10 February 2011

J-P. Maria ,
Wes Hackenberger  and
S. Trolier-McKinstry
J-P. Maria
Affiliation:
The Pennsylvania State University, Department of Materials Science and Engineering, Materials Research Laboratory, University Park, PA 16802-4801
Wes Hackenberger
Affiliation:
TRS Ceramics, State College, PA 16801
S. Trolier-McKinstry
Affiliation:
The Pennsylvania State University, Department of Materials Science and Engineering, Materials Research Laboratory, University Park, PA 16802-4801
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Abstract

(001)-oriented heterostructures consisting of LaAlCO3 substrates, SrRuO3 bottom electrodes, and Pb(Mg1/3Nb2/3) O3-PbTiO3 (PMN-PT) piezoelectric actuators were deposited by pulsed laser deposition (PLD). 4-circle x-ray diffraction analysis confirmed the epitaxial growth of each layer. In general, the electrical properties were found to be very sensitive to the processing conditions, in particular, the growth temperature. At growth temperatures below ∼620°C, the temperature dependence of the dielectric constant and the onset of a hysteritic polarization were found to be depressed by as much as 80 °C. When growth temperatures were increased above 660°C, electrical properties with temperature dependencies more consistent with those of single crystals were observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 421
Copyright
Copyright © Materials Research Society 1998

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References

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