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Deposition and Etching of Amorphous Carbon Films Prepared by ECR-Plasma-Enhanced Benzene Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

Xiao-Hua Chen ,
Laren M. Tolbert ,
Z. Y. Ning  and
Dennis W. Hess
Xiao-Hua Chen
Affiliation:
School of Chemistry & Biochemistry, Georgia Institute of Technology, Atlanta 30332
Laren M. Tolbert
Affiliation:
School of Chemistry & Biochemistry, Georgia Institute of Technology, Atlanta 30332
Z. Y. Ning
Affiliation:
School of Chemical Engineering, Georgia Institute of Technology, Atlanta 30332 Current address:Department of Physics, Suzhou University, Suzhou 21500 6, China
Dennis W. Hess
Affiliation:
School of Chemical Engineering, Georgia Institute of Technology, Atlanta 30332
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Abstract

Amorphous hydrogenated carbon thin films have been deposited from benzene vapor in a microwave electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD) system. Plasma enhanced dissociation and reaction of benzene were monitored by mass spectrometry. Deposited films were characterized by Fourier transform infrared spectroscopy and fluorescence spectroscopy. The effect of the deposition rate on the film density and plasma etch resistance was also studied. The etch resistance of deposited carbon film is higher than the conventional resist Novolac.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 555: Symposium OO – Properties and Processing of Vapor-Deposited Coatings , 1998 , 315
Copyright
Copyright © Materials Research Society 1999

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