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Deposition of Device Quality μc-Si Films and Solar Cells at High Rates by HWCVD in a W Filament Regime where W/Si Formation is Minimal

Published online by Cambridge University Press:  01 February 2011

E. Iwaniczko ,
A.H. Mahan ,
B. Yan ,
L.N. Gedvilas ,
D.L. Williamson  and
B.P. Nelson
E. Iwaniczko
Affiliation:
NREL, 1617 Cole Blvd., Golden, CO 80401
A.H. Mahan
Affiliation:
NREL, 1617 Cole Blvd., Golden, CO 80401
B. Yan
Affiliation:
United Solar Systems Corporation, 1100 W. Maple Road, Troy, MI 48084
L.N. Gedvilas
Affiliation:
NREL, 1617 Cole Blvd., Golden, CO 80401
D.L. Williamson
Affiliation:
Colo. School of Mines, Golden, CO 80401
B.P. Nelson
Affiliation:
NREL, 1617 Cole Blvd., Golden, CO 80401
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Abstract

μc-Si has traditionally been deposited by Hot Wire CVD at a low filament temperature. At these temperatures, silicides rapidly form on the filament surface, leading in the case of a tungsten filament to both film reproducibility and filament lifetime issues. By depositing films consecutively using identical deposition parameters, these issues are chronicled for a filament temperature of ∼ 1750°C. Upon increasing the filament temperature to ∼ 1825-1850°C, these reproducibility and lifetime issues disappear and, by lowering both the substrate temperature and chamber pressure, device quality μc-Si is deposited at high deposition rates in a filament regime where tungsten silicide formation is minimal. Both single junction and tandem solar cells are fabricated using this material, confirming the validity of this approach.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A6.9
Copyright
Copyright © Materials Research Society 2003

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