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Deposition of Polycrystalline Silicon thin Films by Plasma Enhanced CVD

Published online by Cambridge University Press:  28 February 2011

Russell E. Hollingsworth  and
Pawan K. Bhat
Russell E. Hollingsworth
Affiliation:
Materials Research Group, Inc., 12441 West 49th Ave., Wheat Ridge, CO 80033–1927
Pawan K. Bhat
Affiliation:
Materials Research Group, Inc., 12441 West 49th Ave., Wheat Ridge, CO 80033–1927
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Abstract

Polycrystalline silicon films have been grown using high frequency (110 MHz) rf plasma enhanced chemical vapor deposition with a hydrogen diluted silane gas. Polycrystalline growth was obtained when the silane fraction was less than 10% of the total gas mixture for all rf powers, in marked contrast to growth at 13.56 MHz where high power and more dilution are typically required for microcrystalline growth. Grains with [111] and [220] orientations were observed to have grain sizes up to 900 Angstroms. Room temperature free carrier concentrations as low as 5 × 1015 cm-3 for undoped films were determined by capacitance voltage measurements. Boron doped microcrystalline films were grown with conductivity as high as 8 (Ωcm) V

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 659
Copyright
Copyright © Materials Research Society 1993

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References

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