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Determination of strain within Si1-yCy layers grown by CVD on a Si Substrate

Published online by Cambridge University Press:  01 February 2011

Nikolay Cherkashin ,
A. Gouye ,
F. Hue ,
F. Houdellier ,
M. J. Hytch ,
E. Snoeck ,
V. Paillard ,
O. Kermarrec ,
D. Rouchon  and
M. Burdin
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Nikolay Cherkashin
Affiliation:
nikolay@cemes.fr, CEMES, CNRS, 29 rue Jeanne Marvig, Toulouse, 31055, France, +33 5 62 25 79 60
A. Gouye
Affiliation:
adrien.gouye@cea.fr, STMicroelectronics, 850 rue Jean Monnet, Crolles, 38926, France
F. Hue
Affiliation:
fhue@cemes.fr, CEMES, CNRS, 29 rue Jeanne Marvig, Toulouse, 31055, France
F. Houdellier
Affiliation:
florent@cemes.fr, CEMES, CNRS, 29 rue Jeanne Marvig, Toulouse, 31055, France
M. J. Hytch
Affiliation:
hytch@cemes.fr, CEMES, CNRS, 29 rue Jeanne Marvig, Toulouse, 31055, France
E. Snoeck
Affiliation:
snoeck@cemes.fr, CEMES, CNRS, 29 rue Jeanne Marvig, Toulouse, 31055, France
V. Paillard
Affiliation:
vincent.paillard@cemes.fr, CEMES, CNRS, 29 rue Jeanne Marvig, Toulouse, 31055, France
O. Kermarrec
Affiliation:
kermarrec@cea.fr, STMicroelectronics, 850 rue Jean Monnet, Crolles, 38926, France
D. Rouchon
Affiliation:
rouchon@cea.fr, CEA-LETI, Minatec, 17 rue des Martyrs, Grenoble, 38054, France
M. Burdin
Affiliation:
burdin@cea.fr, CEA-LETI, Minatec, 17 rue des Martyrs, Grenoble, 38054, France
P. Holliger
Affiliation:
holliger@cea.fr, CEA-LETI, Minatec, 17 rue des Martyrs, Grenoble, 38054, France
A. Claverie
Affiliation:
claverie@cemes.fr, CEMES, CNRS, 29 rue Jeanne Marvig, Toulouse, 31055, France
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Abstract

In this work, we performed quantitative measurements of strain in structures consisting of a 30 nm-thick Si1-yCy layer grown by chemical vapour deposition (CVD) on a Si (001) substrate at 550 or 600°C. The total C concentration varies from 0.67 to 1.97% that was measured by SIMS. Geometric phase analysis (GPA) of high resolution transmission electron microscopy (HR TEM) cross-section images and convergent beam electron diffraction (CBED) were used to deduce the strain within these Si1-yCy layers. Finite-element simulations were carried out to estimate the impact of strain relaxation in thin areas of a specimen. These results were compared with the data obtained by high resolution X-ray diffraction and Raman spectroscopy and with the predictions of elasticity theory. Particular interest is paid to the formation of the structural defects within Si1-yCy layers as a function of a C concentration, growth temperature and incorporated strain. Both cross-sectional and plan-view TEM specimen configurations were used to obtain quantitative information on the defect size distribution, their density and structure.

Keywords

stress/strain relationshiptransmission electron microscopy (TEM)chemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1026: Symposium C – Quantitative Electron Microscopy for Materials Science , 2007 , 1026-C07-03
Copyright
Copyright © Materials Research Society 2008

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