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The Effects of Annealing Temperature on the Characteristics of Buried Oxide Silicon-On-Insulator

Published online by Cambridge University Press:  28 February 2011

B.-Y Mao ,
P.-H. Chang ,
H.W. Lam ,
B.W. Shen  and
J.A. Keenan
B.-Y Mao
Affiliation:
Semiconductor Process and Design Center, M/S 944, Texas Instruments. Dallas, TX 75265
P.-H. Chang
Affiliation:
Central Research Laboratory, M/S 147. Texas Instruments. Dallas, TX 75265
H.W. Lam
Affiliation:
Semiconductor Process and Design Center, M/S 944, Texas Instruments. Dallas, TX 75265
B.W. Shen
Affiliation:
Semiconductor Process and Design Center, M/S 944, Texas Instruments. Dallas, TX 75265
J.A. Keenan
Affiliation:
Central Research Laboratory, M/S 147. Texas Instruments. Dallas, TX 75265
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Abstract

The effects of post implantation annealing on the properties of buried oxide silicon-on-insulator (SOI) substrates in the temperature range of 1150°C to 1300°C have been studied. Microstructural analyses showed that the crystallinity of the top silicon layer was improved at higher annealing temperature. Lower thermal donor generation at 450°C was observed in SOI annealed at higher temperature. The improvement in microstructure and lower thermal donor generation were correlated to the lower oxygen concentration in the top silicon film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 251
Copyright
Copyright © Materials Research Society 1986

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