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Effects of Grain Boundaries on Performance of Hydrogenated Nanocrystalline Silicon Solar Cells

Published online by Cambridge University Press:  01 February 2011

Tining Su ,
David Bobela ,
Xixiang Xu ,
Scott Ehlert ,
Dave Beglau ,
Guozhen Yue ,
Baojie Yan ,
Arindam Banerjee ,
Jeff Yang  and
Subhendu Guha
Tining Su
Affiliation:
tsu@uni-solar.com, United Solar Ovonic LLC, Troy, Michigan, United States
David Bobela
Affiliation:
dbobela@nrel.gov, National Renewable Energy Lab, Golden, Colorado, United States
Xixiang Xu
Affiliation:
xxu@uni-solar.com, United Solar Ovonic LLC, Troy, Michigan, United States
Scott Ehlert
Affiliation:
sehlert@uni-solar.com, United Solar Ovonic LLC, Troy, Michigan, United States
Dave Beglau
Affiliation:
dbeglau@uni-solar.com, United Solar Ovonic LLC, Troy, Michigan, United States
Guozhen Yue
Affiliation:
gyue@uni-solar.com, United Solar Ovonic LLC, Troy, Michigan, United States
Baojie Yan
Affiliation:
byan@scholarone.com, United Solar Ovonic LLC, Troy, Michigan, United States
Arindam Banerjee
Affiliation:
abanerjee@uni-solar.com, United Solar Ovonic LLC, Troy, Michigan, United States
Jeff Yang
Affiliation:
jyan@uni-solar.com, United Solar Ovonic LLC, Troy, Michigan, United States
Subhendu Guha
Affiliation:
sguha@uni-solar.com, United Solar Ovonic LLC, Troy, Michigan, United States
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Abstract

We investigate the effect of hydrogenation of grain boundaries on the performance of solar cells for hydrogenated nanocrystalline silicon (nc-Si:H) thin films. Using hydrogen effusion, we found that the amplitude of the lower temperature peak in the H-effusion spectra is strongly correlated to the open-circuit voltage in solar cells. This is attributed to the hydrogenation of grain boundaries in the nc-Si:H films.

Keywords

Siphotovoltaicnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1245: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2010 , 2010 , 1245-A07-01
Copyright
Copyright © Materials Research Society 2010

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References

1 Meier, J., Flückiger, R., Keppner, H., and Shah, A., Appl. Phys. Lett. 65, 860 (1994).Google Scholar
2 Yue, B. Yan G., and Guha, S., in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology, edited by Chu, Virginia, Miyazaki, Seiichi, Nathan, Arokia, Yang, Jeffrey, and Zan, Hsiao-Wen (Mat. Res. Soc. Symp. Proc. 989, Pittsburgh, PA, 2007) pp. 335.Google Scholar
3 Xu, X., Yan, B., Beglau, D., Li, Y., DeMaggio, G., Yue, G., Banerjee, A., Yang, J., Guha, S., Hugger, P., and Cohen, D., in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology, edited by Nathan, Arokia, Flewitt, Andrew, Hou, Jack, Miyazaki, Seiichi, and Yang, Jeffrey (Mater. Res. Soc. Symp. Proc. 1066, Pittsburgh, PA, 2008) pp. 325 Google Scholar
4 Ganguly, G., Yue, G., Yan, B., Yang, J., Guha, S., in Conf. Record of the 2006 IEEE 4th World Conf. on Photovoltaic Energy Conversion, Hawaii, USA, May 7-12, 2006, p.1712.Google Scholar
5 Su, T., Ju, T., Yan, B., Yang, J., Guha, S., and Taylor, P. C., J. Non-Cryst. Solids, 354, 2231 (2008)Google Scholar
6 Nasuno, Y., Kondo, M., and Matsuda, A., Appl. Phys. Lett. 78, 2330 (2001).Google Scholar
7 Kondo, M., et al., in Proceedings of 31st IEEE PVSC (IEEE, New York, 2005) pp. 1377 (and references therein).Google Scholar
8 Finger, F., Prasad, K., Dubail, S., Shah, A., Tang, X.-M, Weber, J., and Beyer, W., in Amorphous Silicon Technology, edited by Madan, A., Hamakawa, Y., Thompson, M., Taylor, P. C., and LeComber, P. G. (Mat. Res. Soc. Symp. Proc. 219, Pittsburgh, PA, 1991) pp. 383.Google Scholar
9 Beyer, W., Harpke, P., and Zasreow, U., in Amorphous and Microcrystalline Silicon Technology, edited by Schiff, E.A., Hack, M., Wagner, S., Schropp, R., Shimizu, I. (Mater. Res. Soc. Symp. Proc. 467, Pittsburgh, PA, 1997) pp.343.Google Scholar
10 Xu, X., Yang, J., and Guha, S., J. Non-Cryst. Solids, 198–200, 60 (1996).Google Scholar
11 Guha, S., Yang, J., Banerjee, A., Yan, B., Lord, K., Sol. Ener. Mater. Sol Cells, 78, 329 (2003) (and references therein).Google Scholar
12 Mahan, A. H., Yang, J., Guha, S., and Williamson, D. L., Phys. Rev. B 61, 1677 (2000).Google Scholar
13 Yue, G., Yan, B., Ganguly, G., Yang, J., Guha, S., Teplin, C. W., and Williamson, D., in Conf. Record of the 2006 IEEE 4th World Conf. on Photovoltaic Energy Conversion, Hawaii, USA, May 7-12, pp. 1588 (and references therein).Google Scholar
14 Beyer, W., in Tetrahedrally-Bonded Amorphous Semiconductors, edited by Adler, S. D. and Fritzshe, H.H. (Plenum, New York, 1985) pp.129.Google Scholar
15 Stradins, P., Young, D., Yan, Y., Iwaniczko, E., Xu, Y., Reedy, R., Branz, H., and Wang, Q., Appl. Phys. Lett. 89, 121921 (2006).Google Scholar