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Elastic Energies of Coherent Germanium Islands on Silicon

Published online by Cambridge University Press:  25 February 2011

David Vanderbilt  and
L. K. Wickham
David Vanderbilt
Affiliation:
Lyman Laboratory of Physics, Harvard University, Cambridge, Massachusetts 02138
L. K. Wickham
Affiliation:
Lyman Laboratory of Physics, Harvard University, Cambridge, Massachusetts 02138
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Abstract

Motivated by recent observations of coherent Ge island formation during growth of Ge on Si (100), we have carried out a theoretical study of the elastic energies associated with the evolution of a uniform strained overlayer as it segregates into coherent islands. In the context of a two-dimensional model, we have explored the conditions under which coherent islands may be energetically favored over both uniform epitaxial films and dislocated islands. We find that if the interface energy (for dislocated islands) is more than about 15% of the surface energy, then there is a range of island sizes for which the coherent island structure is preferred.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 555
Copyright
Copyright © Materials Research Society 1991

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References

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