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Electrical Study of Device Arrays on Thin Film Vanadium Dioxide

Published online by Cambridge University Press:  26 February 2011

Ramesh G. Mani ,
S. Ramanathan  and
V. Narayanamurti
Ramesh G. Mani
Affiliation:
mani.rg@gmail.com, Georgia State University, Department of Physics and Astronomy, 29 Peachtree Center Avenue, Atlanta, GA, 30303, United States, 404 463 9633, (404) 651-1427
S. Ramanathan
Affiliation:
shriram@deas.harvard.edu, Harvard University, DEAS-Division of Engineering and Applied Sciences, 29 Oxford Street, Cambridge, MA, 02138, United States
V. Narayanamurti
Affiliation:
oinky@deas.harvard.edu, Harvard University, DEAS-Division of Engineering and Applied Sciences, 29 Oxford Street, Cambridge, MA, 02138, United States
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Abstract

The VO2 phase of vanadium oxide is known to exhibit large changes in the electrical and optical properties in the vicinity of the structural phase transition at 68C. Here, we report on the fabrication and study of thin film vanadium oxide (VO2) devices deposited on R-plane sapphire. Thin films prepared by electron beam evaporation have been processed by photolithography into two-terminal strips for electrical measurements. Measurements on such specimens exhibit reproducibility across a chip, in addition to hysteretic transport, and a one-to-two orders of magnitude change in the resistance in the vicinity of the structural transition. In sum, these experiments show that e-beam evaporation of VO2 constitutes a simple and useful approach to realizing devices from this technologically important material.

Keywords

thin filmelectrical propertiesmetal-insulator transition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 966: Symposium T – Ferroelectrics and Multiferroics , 2006 , 0966-T10-18
Copyright
Copyright © Materials Research Society 2007

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