Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-01-15T08:32:58.077Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrochemical Dip-Pen Nanolithography of Conductive Wires

Published online by Cambridge University Press:  26 February 2011

Fapei Zhang ,
Ryo Yamada  and
Hirokazu Tada
Fapei Zhang
Affiliation:
fzhang@molectronics.jp, Division of Materials Science, School of Engineering Science, Osaka University, 1-3 machikaneyama, Toyonaka, Osaka, 560-8531, Japan
Ryo Yamada
Affiliation:
yamada@molectronics.jp
Hirokazu Tada
Affiliation:
tada@molectronics.jp
Get access

Abstract

We have explored the fabrication of conductive nanowires on different types of substrates by electrochemistry-assisted DPN (E-DPN) with an atomic force microscope. Various parameters of E-DPN were examined systematically including the effects of coating methods and the types of the tips on the electrodeposition behavior. It was found that a chemically-modified Si AFM tip is very suitable for E-DPN. Platinum and polyaniline nanowires with a line width of ca.100 nm to sub- 100 nm were prepared on the metallic (Au) and semiconducting (Si) surfaces. The parameters indispensable for E-DPN of metal and polymer nanowires on an insulating SiO2 surface will also be discussed.

Keywords

nanostructurescanning probe microscopy (SPM)electrodeposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 901: Symposium R – Assembly at the Nanoscale – Toward Functional Nanostructured Materials , 2005 , 0901-Ra05-09-Rb05-09
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Piner, R. D., Zhu, J., Xu, F., Hong, S and Mirkin, C. A., Science 283, 661 (1999).Google Scholar
2 Hong, S. H. and Mirkin, C. A., Science 288, 1881 (2000).Google Scholar
3 Lee, K. -B., Park, S. -H., Mirkin, C. A., Smith, J. C. and Mrksich, M., Science 295, 1702 (2002).Google Scholar
4 Jung, H., Kulkarni, R. and Collier, C. P., J. Am. Chem. Soc. 125, 12096 (2003).Google Scholar
5 Gundiah, G., John, N. S., Thomas, P. J., Kulkarni, G. U. and Rao, C. N., Appl. Phys. Lett. 84, 5341 (2004).Google Scholar
6 Li, Y., Maynor, W. and Liu, J., J. Am. Chem. Soc. 123, 2105 (2001)Google Scholar
7 Li, Y., Maynor, B. and Liu, J, Chin. J. Inorg. Chem. 18, 34 (2002).Google Scholar
8 Higashi, G. S., Chabal, Y. J., Trucks, G. W., Raghavachari, K., Appl. Phys. Lett. 125, 11337 (1990).Google Scholar
9 Takahagi, T., Nagai, I., Ishitani, A., Kuroda, H. and Nagasawa, Y., J. Appl. Phys. 64, 3516 (1988).Google Scholar