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Electron Spin Resonance Investigations of Rapid Thermal Oxidized Porous Silicon

Published online by Cambridge University Press:  28 February 2011

H. Linke ,
P. Omling ,
B. K. Meyer ,
V. Petrova-Koch ,
T. Muschik  and
V. Lehmann
H. Linke
Affiliation:
Solid State Physics Department, University of Lund, S-22100 Lund, Sweden
P. Omling
Affiliation:
Solid State Physics Department, University of Lund, S-22100 Lund, Sweden
B. K. Meyer
Affiliation:
Physics Department, Tech. Univ Munich, D 8046 Garching, Germany
V. Petrova-Koch
Affiliation:
Physics Department, Tech. Univ Munich, D 8046 Garching, Germany
T. Muschik
Affiliation:
Physics Department, Tech. Univ Munich, D 8046 Garching, Germany
V. Lehmann
Affiliation:
Siemens Research Laboratories, D 8000 Munich, Germany
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Abstract

We studied the defect properties present in rapid thermal oxidized porous silicon (RTOPS) by Electron Spin Resonance (ESR). Two different types of defects are distinguished, one similar to the ones observed in damaged c-Si, and in a-Si. The second one is probably related to the Pbo center at the Si/SiO2 interface. The minimum density of 1016 cm-3 is observed for the as etched and for the 900°C oxidized samples, but reaches a maximum of 8×1018 cm-3for the 600°C samples. The PL intensity anticorrelates with the defect densities, which shows that nonradiative recombination via defects is a very powerful channel in quenching the PL efficiency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 251
Copyright
Copyright © Materials Research Society 1993

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References

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