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Energy Dependence of Transient Enhanced Diffusion and {311} Defect Kinetics

Published online by Cambridge University Press:  17 March 2011

Hugo Saleh ,
Mark E. Law ,
Sushil Bharatan ,
Kevin S. Jones ,
Wish Krishnamoorthy  and
Temel Buyuklimanli
Hugo Saleh
Affiliation:
SWAMP Center, University of Florida, Gainesville, FL 32611
Mark E. Law
Affiliation:
SWAMP Center, University of Florida, Gainesville, FL 32611
Sushil Bharatan
Affiliation:
SWAMP Center, University of Florida, Gainesville, FL 32611
Kevin S. Jones
Affiliation:
SWAMP Center, University of Florida, Gainesville, FL 32611
Wish Krishnamoorthy
Affiliation:
SWAMP Center, University of Florida, Gainesville, FL 32611
Temel Buyuklimanli
Affiliation:
Evans East, East Windsor, NJ 08520
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Abstract

Boron, a P-type dopant, experiences Transient Enhanced Diffusion (TED) via interstitials. The Boron TED and {311} dissolution rates are explored as a function of implant energy dependence. Silicon implants of 1014/cm2 at 20, 40, 80, and 160 keV were used to damage the surface of a wafer with an epitaxially grown boron marker layer. Samples were annealed at 750°C for 15 to 135 minutes and 800°C for 10 to 30 minutes to observe the diffusion exhibited by the marker layer and to correlate this with the dissolution of {311} type defects. The diffusion enhancement depends strongly on implant energy but the {311} dissolution rate is weakly dependent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B6.7
Copyright
Copyright © Materials Research Society 2000

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