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Epitaxial Growth of Fluoride Films on Silicon Substrates

Published online by Cambridge University Press:  22 February 2011

Hiroshi Ishiwara  and
Tanemasa Asano
Hiroshi Ishiwara
Affiliation:
Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227, Japan
Tanemasa Asano
Affiliation:
Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227, Japan
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Abstract

Growth conditions and structural properties of vacuumevaporated fluoride films on Si(lll) and (100) substrates are reviewed. It has been found that single crystal CaF2 films are grown on both (111) and (100) substrates at temperatures of 600–800°C and 500–600°C, respectively. It has also been found that SrF2 and BaF2 films of good crystalline quality are grown on Si(lll) at temperatures around 600°C, but that the films grown on Si(100) contain (111) oriented crystallites. In epitaxial growth of a Si/CaF2/Si structure, a novel growth method is presented, in which a thin Si layer is deposited at room temperature prior to deposition of a thick Si film at elevated temperature. Investigations on growth of mixed fluoride films, radiation damage in CaF2 films, and epitaxial relations in the fluoride/Si heterostructures are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 393
Copyright
Copyright © Materials Research Society 1984

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References

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